Study on the IGBT Using a Deep Trench Filled With SiO<sub>2</sub> and High-k Dielectric Film

Chen, Weizhen; Cheng, Junji

doi:10.1109/jeds.2020.3025220

Cited by 3 publications

(2 citation statements)

References 19 publications

(29 reference statements)

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“…La2O3 and LaAlO3 [37], LaTiO [38] and HfTiO [39] can be the potential high-k material candidates. By magnetron sputtering or atomic layer deposition, the high-k material can be deposited to fill up the trench [39], [40]. Then, the device is integrated with a Schottky barrier diode to form a new device -SiC HK SG-MOSFET.…”

Section: Discussionmentioning

confidence: 99%

Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode

Zheng¹,

Tang

Chau³

et al. 2021

IEEE J. Electron Devices Soc.

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A SiC high-k (HK) split-gate (SG) MOSFET is proposed with a Schottky barrier diode (SBD) integrated between the split gates, and is investigated by numerical TCAD simulation. Results show that it has the same breakdown voltage as the SiC high-k (HK) MOSFET with an optimized and practical k value of 30 for its insulation pillar, which results in the highest breakdown voltage (1857 V). The forward voltage (VF) and reverse recovery charge (QRR) of the device are 0.9 V and 3.49 μC/cm 2 respectively, much lower than those of the SiC HK MOSFET due to the SBD. Moreover, lower reverse transfer capacitance (CRSS), smaller gate charge (QG), and smaller gate-to-drain charge (QGD) are achieved for the proposed device because of the split-gates, leading to much lower switching power loss when compared with the SiC HK MOSFET. All these results indicate that the SiC HK SG-MOSFET has promising potential in future power electronics applications.

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Section: Discussionmentioning

confidence: 99%

Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode

Zheng¹,

Tang

Chau³

et al. 2021

IEEE J. Electron Devices Soc.

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“…Even though fabrication processes such as deep trench refilling and multi-epi have been fully developed, the problem of charge imbalances due to the process deviation is still severe [ 15 , 16 , 17 ]. Another way to improve IGBT performance is by introducing a high-relative-permittivity (high-k or HK) dielectric into the drift region; HK-IGBTs can obtain a similar performance to SJ-IGBTs without the charge imbalance problem [ 18 , 19 , 20 , 21 ]. However, most HK materials are incompatible with the Si IGBT fabrication process, and the electric field peak at the bottom of HK-IGBTs may lead to reliability problems during the switching process [ 22 , 23 ].…”

Section: Introductionmentioning

confidence: 99%

A Novel IGBT with SIPOS Pillars Achieving Ultralow Power Loss in TCAD Simulation Study

Yuan,

Yan,

et al. 2024

Micromachines

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A novel insulated gate bipolar transistor with Semi-Insulated POly Silicon (SIPOS) is presented in this paper and analyzed through TCAD simulation. In the off state, the SIPOS-IGBT can obtain a uniform electric field distribution, which enables a thinner drift region under the same breakdown voltage. In the on state, an electron accumulation layer is formed along the SIPOS, which can increase the injection level of the “PiN region” in the device, and the carrier concentration in the drift region is also increased due to the charge balance effect. Moreover, the SIPOS-IGBT can achieve a quick and thorough depletion in the drift region during the turn-off transient, which can greatly reduce the turn-off loss of the SIPOS-IGBT. These advantages improve the tradeoff between the conduction and switching losses. According to the simulation results, the SIPOS-IGBT obtained a 58% lower turn loss than that of a field-stop (FS) IGBT and 30% lower than an HK-IGBT with the same on-state voltage.

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Improvement Breakdown Voltage by a Using Crown-Shaped Gate

Park

Kim

2023

Electronics

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In this paper, a crown-shaped trench gate formed by a sidewall spacer in insulated gate bipolar transistors (IGBT) is proposed to improve breakdown voltage. When a sidewall spacer is added to trench bottom corners, the electric field is distributed to the surface of the sidewall spacer and decreased to 48% peak value of the electric field. Thus, the sidewall spacer IGBT improved to 5% breakdown voltage. Another study proposed an additional oxide layer for trench bottom corners and improved breakdown voltage similar to the proposed IGBT. Previous studies have shown degradation in other electrical characteristics. However, this study shows a sidewall spacer IGBT that increases the current over 3% compared to a conventional trench IGBT when the applied gate voltage is under 4 V. Additionally, the turn-off loss characteristic is similar to conventional trench IGBT. Therefore, the breakdown voltage of the IGBT was improved while maintaining similar electrical properties to existing IGBTs through the crown-shaped gate.

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Study on the IGBT Using a Deep Trench Filled With SiO₂ and High-k Dielectric Film

Cited by 3 publications

References 19 publications

Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode

Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode

A Novel IGBT with SIPOS Pillars Achieving Ultralow Power Loss in TCAD Simulation Study

Improvement Breakdown Voltage by a Using Crown-Shaped Gate

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Study on the IGBT Using a Deep Trench Filled With SiO2 and High-k Dielectric Film

Cited by 3 publications

References 19 publications

Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode

Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode

A Novel IGBT with SIPOS Pillars Achieving Ultralow Power Loss in TCAD Simulation Study

Improvement Breakdown Voltage by a Using Crown-Shaped Gate

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Study on the IGBT Using a Deep Trench Filled With SiO₂ and High-k Dielectric Film