Two-dimensional (2D) van der Waals (vdW) heterostructures herald new opportunities for conducting fundamental studies of new physical/chemical phenomena and developing diverse nanodevice applications. In particular, vdW heterojunction p−n diodes exhibit great potential as highperformance photodetectors, which play a key role in many optoelectronic applications. Here, we report on 2D MoTe 2 /MoS 2 multilayer semivertical vdW heterojunction p−n diodes and their optoelectronic application in self-powered visible−invisible multiband detection and imaging. Our MoTe 2 /MoS 2 p−n diode exhibits an excellent electrical performance with an ideality factor of less than 1.5 and a high rectification (ON/OFF) ratio of more than 10 4 . In addition, the photodiode exhibits broad spectral photodetection capability over the range from violet (405 nm) to near-infrared (1310 nm) wavelengths and a remarkable linear dynamic range of 130 dB within an optical power density range of 10 −5 to 1 W/cm 2 in the photovoltaic mode. Together with these favorable static photoresponses and electrical behaviors, very fast photo-and electrical switching behaviors are clearly observed with negligible changes at modulation frequencies greater than 100 kHz. In particular, inspired by the photoswitching results for periodic red (638 nm) and near-infrared (1310 nm) illumination at 100 kHz, we successfully demonstrate a prototype self-powered visible− invisible multiband image sensor based on the MoTe 2 /MoS 2 p−n photodiode as a pixel. Our findings can pave the way for more advanced developments in optoelectronic systems based on 2D vdW heterostructures.

Recent advances in flexible and stretchable electronics have led to a surge of electronic skin (e-skin)–based health monitoring platforms. Conventional wireless e-skins rely on rigid integrated circuit chips that compromise the overall flexibility and consume considerable power. Chip-less wireless e-skins based on inductor-capacitor resonators are limited to mechanical sensors with low sensitivities. We report a chip-less wireless e-skin based on surface acoustic wave sensors made of freestanding ultrathin single-crystalline piezoelectric gallium nitride membranes. Surface acoustic wave–based e-skin offers highly sensitive, low-power, and long-term sensing of strain, ultraviolet light, and ion concentrations in sweat. We demonstrate weeklong monitoring of pulse. These results present routes to inexpensive and versatile low-power, high-sensitivity platforms for wireless health monitoring devices.

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Two-dimensional (2D) MoS2 is a representative n-type transition-metal dichalcogenide (TMD) semiconductor that has great potential for future nanoscale electronic and optoelectronic applications. Here, we report a high-performance MoS2 phototransistor that exhibits a photoresponse in the 400–700 nm range with the maximum responsivity of over 1 × 104 A/W. As a more sophisticated optoelectronic application than a simple unit device, it is implemented in a photoinverter (NOT logic gate) connected to an external resistor, which clearly shows photoinduced static and dynamic characteristics. Furthermore, we demonstrate a prototype visible imager using the MoS2 photoinverter as imaging pixels as an excellent example of advanced developments in an optoelectronic system based on the 2D semiconductors.

Polarization-sensitive photodetection has attracted considerable attention as an emerging technology for future optoelectronic applications such as three-dimensional (3D) imaging, quantum optics, and encryption. However, traditional photodetectors based on Si or III−V InGaAs semiconductors cannot directly detect polarized light without additional optical components. Herein, we demonstrate a selfpowered linear-polarization-sensitive near-infrared (NIR) photodetector using a two-dimensional WSe 2 /ReSe 2 van der Waals heterostructure. The WSe 2 /ReSe 2 heterojunction photodiode with semivertical geometry exhibits excellent performance: an ideality factor of 1.67, a broad spectral photoresponse of 405− 980 nm with a significant photovoltaic effect, outstanding linearity with a linear dynamic range wider than 100 dB, and rapid photoswitching behavior with a cutoff frequency up to 100 kHz. Strongly polarized excitonic transitions around the band edge in ReSe 2 lead to significant 980 nm NIR linear-polarization-dependent photocurrent. This linear polarization sensitivity remains stable even after exposure to air for longer than five months. Furthermore, by leveraging the NIR (980 nm)-selective linear polarization detection of this photodiode under photovoltaic operation, we demonstrate digital incoherent holographic 3D imaging.

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Memristive technology has been rapidly emerging as a potential alternative to traditional CMOS technology, which is facing fundamental limitations in its development. Since oxide-based resistive switches were demonstrated as memristors in 2008, memristive devices have garnered significant attention due to their biomimetic memory properties, which promise to significantly improve power consumption in computing applications. Here, we provide a comprehensive overview of recent advances in memristive technology, including memristive devices, theory, algorithms, architectures, and systems. In addition, we discuss research directions for various applications of memristive technology including hardware accelerators for artificial intelligence, in-sensor computing, and probabilistic computing. Finally, we provide a forward-looking perspective on the future of memristive technology, outlining the challenges and opportunities for further research and innovation in this field. By providing an up-to-date overview of the state-of-the-art in memristive technology, this review aims to inform and inspire further research in this field.

Two-dimensional (2D) layered van der Waals atomic crystals exhibit many fascinating properties. In particular, their dangling-bond-free nature enables different 2D materials to be stacked on the top of each other without restraint, thereby forming a heterostructure. In this study, a high-performance all 2D W S e 2 / M o S 2 heterojunction photodiode with a graphene contact as an electrode is demonstrated. It exhibits an excellent electrical performance (ideality factor of 1.2 and rectification ratio of 10 4 ), a broad spectral photoresponse (from 450 to 980 nm), and a remarkable linearity with a linear dynamic range of 113 dB. Finally, a self-powered single pixel imager is demonstrated as a feasible optoelectronic application.