Near-Infrared Self-Powered Linearly Polarized Photodetection and Digital Incoherent Holography Using WSe₂/ReSe₂ van der Waals Heterostructure

Abstract

Polarization-sensitive photodetection has attracted considerable attention as an emerging technology for future optoelectronic applications such as three-dimensional (3D) imaging, quantum optics, and encryption. However, traditional photodetectors based on Si or III−V InGaAs semiconductors cannot directly detect polarized light without additional optical components. Herein, we demonstrate a selfpowered linear-polarization-sensitive near-infrared (NIR) photodetector using a two-dimensional WSe 2 /ReSe 2 van der Waals heterostructure. The WSe 2 /ReSe 2 heterojunction photodiode with semivertical geometry exhibits excellent performance: an ideality factor of 1.67, a broad spectral photoresponse of 405− 980 nm with a significant photovoltaic effect, outstanding linearity with a linear dynamic range wider than 100 dB, and rapid photoswitching behavior with a cutoff frequency up to 100 kHz. Strongly polarized excitonic transitions around the band edge in ReSe 2 lead to significant 980 nm NIR linear-polarization-dependent photocurrent. This linear polarization sensitivity remains stable even after exposure to air for longer than five months. Furthermore, by leveraging the NIR (980 nm)-selective linear polarization detection of this photodiode under photovoltaic operation, we demonstrate digital incoherent holographic 3D imaging.

Efficient Suppression of Charge Recombination in Self-Powered Photodetectors with Band-Aligned Transferred van der Waals Metal Electrodes

“…This specific structure, furthermore, weakens interlayer coupling, resulting in the electronic and vibrational behavior of decoupled monolayers in the bulk . Recently, ReSe 2 has been proved to be a promising candidate for the application of anisotropic optoelectronics. , With an indirect band gap of about 1.20 eV, bulk ReSe 2 also holds enormous potential for near-infrared photodetection and imaging …”

“…35 Recently, ReSe 2 has been proved to be a promising candidate for the application of anisotropic optoelectronics. 32,36 With an indirect band gap of about 1.20 eV, 37 bulk ReSe 2 also holds enormous potential for near-infrared photodetection and imaging. 36 Here, we report the design and fabrication of vdW-contacted Au−ReSe 2 −Ag photodiodes through a combination of both transferred metal integration and intentional band alignment.…”

“…32,36 With an indirect band gap of about 1.20 eV, 37 bulk ReSe 2 also holds enormous potential for near-infrared photodetection and imaging. 36 Here, we report the design and fabrication of vdW-contacted Au−ReSe 2 −Ag photodiodes through a combination of both transferred metal integration and intentional band alignment. The vdW-contacted metal−semiconductor−metal (MSM) photodiode features atomically sharp and flat metal−semiconductor interfaces.…”

Enhanced Photodetection Range from Visible to Shortwave Infrared Light by ReSe2/MoTe2 van der Waals Heterostructure

“…The electron affinities of ReSe 2 and MoTe 2 are 4.08 and 3.9 eV, respectively. The band gaps of ReSe 2 and MoTe 2 nanosheets are 1.2 and 1.02 eV, respectively [ 36 , 37 ]. According to Figure S2 , the electrical characteristics of single ReSe 2 and MoTe 2 field-effect transistors (FET) are characterized to determine the carrier type.…”

2D Materials for Efficient Photodetection: Overview, Mechanisms, Performance and UV-IR Range Applications

“…Although ReSe 2 is an effective device for photodetection, it has a drawback which is that, in the dark situation, the flowing current does not return to the primitive dark current level. This aspect is attributed to the slow recombination of charge carriers, which can be confirmed by resetting the device via exerting short pulses at the gate terminals ( Konstantatos et al, 2012 ; Ahn et al, 2021 ). For the case of detecting polarized light with ReS 2 photodetectors, the reported responsivity is somewhat enhanced and ranged from 3.97 × 103 to 1.18 × 106 AW -1 at an operation wavelength of 1064 nm.…”