Vertical full-colour micro-LEDs via 2D materials-based layer transfer

Shin, Jiho; Kim, Hyunseok; Sundaram, Suresh; Jeong, Junseok; Park, Bo‐In; Chang, Celesta S.; Choi, Junho; Kim, Taemin; Saravanapavanantham, Mayuran; Lu, Kuangye; Kim, Sungkyu; Suh, Jun Min; Kim, Ki-Seok; Song, Moon Hee; Liu, Yunpeng; Qiao, Kuan; Kim, Jaehwan; Kim, Yeongin; Kang, Ji‐Hoon; Kim, Jekyung; Lee, Doeon; Lee, Jae Yong; Kim, Justin S.; Lee, Han Eol; Yeon, Han-Wool; Kum, Hyun; Bae, Sang‐Hoon; Bulović, Vladimir; Yu, Ki Jun; Lee, Kyusang; Chung, Kwanghun; Hong, Young June; Ougazzaden, A.; Kim, J.

doi:10.1038/s41586-022-05612-1

Cited by 124 publications

(75 citation statements)

References 36 publications

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“…This process is no longer remote epitaxy but a special kind of epitaxial lateral overgrowth (ELOG) (41). As previously reported (17,25,(42)(43)(44)(45), remote epitaxy is a promising method for fabricating transferable III-nitride films and light-emitting devices. Remote epitaxy of single-crystal GaN(0001) films on graphene/GaN(0001) templates has been reported at a growth temperature of ~700°C by MBE (18,24).…”

Section: Discussionmentioning

confidence: 79%

Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene

et al. 2023

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Transferred graphene provides a promising III-nitride semiconductor epitaxial platform for fabricating multifunctional devices beyond the limitation of conventional substrates. Despite its tremendous fundamental and technological importance, it remains an open question on which kind of epitaxy is preferred for single-crystal III-nitrides. Popular answers to this include the remote epitaxy where the III-nitride/graphene interface is coupled by nonchemical bonds, and the quasi-van der Waals epitaxy (quasi-vdWe) where the interface is mainly coupled by covalent bonds. Here, we show the preferred one on wet-transferred graphene is quasi-vdWe. Using aluminum nitride (AlN), a strong polar III-nitride, as an example, we demonstrate that the remote interaction from the graphene/AlN template can inhibit out-of-plane lattice inversion other than in-plane lattice twist of the nuclei, resulting in a polycrystalline AlN film. In contrast, quasi-vdWe always leads to single-crystal film. By answering this long-standing controversy, this work could facilitate the development of III-nitride semiconductor devices on two-dimensional materials such as graphene.

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Section: Discussionmentioning

confidence: 79%

Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene

et al. 2023

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“…The negligible EL emission beyond the edges of the source contact can be attributed to highly localized band bending directly above the electrode. The ability to spatially localize EL simply via electrode patterning suggests that these MS-MoS 2 vertical MSIM devices can be used as pixels in miniaturized light sources such as micro light emitting diodes (micro-LEDs) …”

Section: Resultsmentioning

confidence: 99%

Electroluminescence from Megasonically Solution-Processed MoS₂ Nanosheet Films

Rangnekar,

Sangwan,

Jin

et al. 2023

ACS Nano

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“…Recently, remote epitaxy has proven significant advantages, including the facile transferability of the vdW epitaxy and the capability to produce freestanding single-crystalline nanomembranes. For instance, III-V thin-films produced from remote epitaxy can be handled by 2DLT to realize diverse photonic devices [ 7 , 42 , 88 – 94 ] for photonic integrated circuits and exploring nanophotonic physics [ 95 – 100 ]. Figure 4 h displays the cross-sectional SEM image and the light-emitting images of flexible AlGaAs LED [ 90 ].…”

Section: Applicationsmentioning

confidence: 99%

“…To overcome these limitations, remote and van der Waals (vdW) epitaxy technologies have been proposed as a growth method together with a new layer transfer technique called 2D material-assisted layer transfer (2DLT) [ 7 ]. Massive researches have been reported based on this technique.…”

Section: Introductionmentioning

confidence: 99%

Applications of remote epitaxy and van der Waals epitaxy

et al. 2023

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Epitaxy technology produces high-quality material building blocks that underpin various fields of applications. However, fundamental limitations exist for conventional epitaxy, such as the lattice matching constraints that have greatly narrowed down the choices of available epitaxial material combinations. Recent emerging epitaxy techniques such as remote and van der Waals epitaxy have shown exciting perspectives to overcome these limitations and provide freestanding nanomembranes for massive novel applications. Here, we review the mechanism and fundamentals for van der Waals and remote epitaxy to produce freestanding nanomembranes. Key benefits that are exclusive to these two growth strategies are comprehensively summarized. A number of original applications have also been discussed, highlighting the advantages of these freestanding films-based designs. Finally, we discuss the current limitations with possible solutions and potential future directions towards nanomembranes-based advanced heterogeneous integration. Graphical Abstract

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Vertical full-colour micro-LEDs via 2D materials-based layer transfer

Cited by 124 publications

References 36 publications

Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene

Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene

Electroluminescence from Megasonically Solution-Processed MoS₂ Nanosheet Films

Applications of remote epitaxy and van der Waals epitaxy

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Vertical full-colour micro-LEDs via 2D materials-based layer transfer

Cited by 124 publications

References 36 publications

Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene

Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene

Electroluminescence from Megasonically Solution-Processed MoS2 Nanosheet Films

Applications of remote epitaxy and van der Waals epitaxy

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Product

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About

Electroluminescence from Megasonically Solution-Processed MoS₂ Nanosheet Films