Field emission (FE) has been extensively explored from various exotic low dimensional carbon nanomaterials, such as amorphous carbon films, 1 single and multiwalled carbon nanotubes (CNTs), 2 tubular graphitic cones, 3 vertically aligned nanowalls, 4 few-layered graphene (FLG) nanoflakes, 5,6 and, more recently, from doped and pristine graphene. 7,8 Graphene, a two-dimensional monatomic plane layer of hexagonally arrayed sp 2-hybridized carbon atoms forms the backbone of all the above-mentioned carbon nanostructures. 9 The highly desirable properties of graphene, such as atomic thickness, excellent electrical conductivity, and high aspect ratio, make it an ideal candidate for field emission applications. 7-9 Also, as compared to CNTs, the presence of a large number of edges may render graphene superior for electron tunneling. 7 Although FE in CNTs is highly efficient, it has been shown that heteroatom doping by elements, such as nitrogen, can further reduce the effective tunneling potential barrier, thereby reducing the turn-on field and significantly increasing the electron emission current. 10,11 Nitrogen acts as an electron donor in CNTs because it has five valence electrons and causes a shift in the Fermi level (E F) to the conduction band and increases the electron density of states (DOS). In the case of graphene, theoretical studies have shown that substitutional heteroatom doping can modulate the band structure of graphene, leading to a metal-semiconductor transition, thereby expanding the applications of graphene. 12,13 Although Malesevic et al. 5 and Qi et al. 6 have shown the field emission behavior of pristine and Ar plasma-treated FLG nanoflakes, respectively, to the best of our knowledge, until now, there ' EXPERIMENTAL SECTION The synthesis of FLGs was carried out in a SEKI MPECVD deposition system, equipped with a 1.5 kW, 2.45 GHz microwave source. The substrates used were bare n-type heavily doped Si wafers (resistivity < 0.005 Ω cm) (10 mm  10 mm). Prior to growth, the substrates were pretreated with N 2 plasma at 650 W at 40 Torr while the substrate temperature was maintained at 900°C. Synthesis was then carried out using CH 4 /N 2 (gas flow
