Visible light electroluminescence (EL) has been obtained from Er-doped GaN Schottky barrier diodes. The GaN was grown by molecular beam epitaxy on Si substrates using solid sources (for Ga, and Er) and a plasma source for N2. Al was utilized for both the Schottky (small-area) and ground (large-area) electrodes. Strong green light emission was observed under reverse bias, with weaker emission present under forward bias. The emission spectrum consists of two narrow green lines at 537 and 558 nm and minor peaks at 413 and at 666/672 nm. The green emission lines have been identified as Er transitions from the H11/22 and S3/24 levels to the I15/24 ground state and the blue and red peaks as the H9/22 and F9/24 Er transitions to the same ground state. The reverse bias EL intensity was found to increase linearly with bias current.

Visible and infrared rare-earth-activated electroluminescence (EL) has been obtained from Schottky barrier diodes consisting of indium tin oxide (ITO) contacts on an Er-doped GaN layer grown on Si. The GaN was grown by molecular beam epitaxy on Si substrates using solid sources for Ga, Mg, and Er and a plasma source for N2. RF-sputtered ITO was used for both diode electrodes. The EL spectrum shows two peaks at 537 and 558 nm along with several peaks clustered around 1550 nm. These emission lines correspond to atomic Er transitions to the I15/24 ground level and have narrow linewidths. The optical power varies linearly with reverse bias current. The external quantum and power efficiencies of GaN:Er visible light-emitting diodes have been measured, with values of 0.026% and 0.001%, respectively. Significantly higher performance is expected from improvements in the growth process, device design, and packaging.

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Femtosecond, two-photon-absorption laser-induced-fluorescence (fs-TALIF) spectroscopy is employed to measure space-and time-resolved atomic-oxygen distributions in a nanosecond, repetitively pulsed, externally grounded, atmospheric-pressure plasma jet flowing helium with a variable oxygen admixture. The high-peak-intensity, low-average-energy femtosecond pulses result in increased TALIF signal with reduced photolytic inferences. This allows 2D imaging of absolute atomic-oxygen number densities ranging from 5.8 × 10 15 to 2.0 × 10 12 cm −3 using a cooled CCD with an external intensifier. Xenon is used for signal and imaging-system calibrations to quantify the atomic-oxygen fluorescence signal. Initial results highlight a transition in discharge morphology from annular to filamentary, corresponding with a change in plasma chemistry from ozone to atomic oxygen production, as the concentration of oxygen in the feed gas is changed at a fixed voltage-pulse-repetition rate. In this configuration, significant concentrations of reactive oxygen species may be remotely generated by sustaining an active discharge beyond the confines of the dielectric capillary, which may benefit applications that require large concentrations of reactive oxygen species such as material processing or biomedical devices.

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A custom multi-chip power module packaging was designed to exploit the electrical and thermal performance potential of silicon carbide MOSFETs and JBS diodes. The dual thermo-mechanical package design was based on an aggressive 200°C ambient environmental requirement and 1200 V blocking and 100 A conduction ratings. A novel baseplate-free module design minimizes thermal impedance and the associated device junction temperature rise. In addition, the design incorporates a free-floating substrate configuration to minimize thermal expansion coefficient induced stresses between the substrate and case. Details of the module design and materials selection process will be discussed in addition to highlighting deficiencies in current packaging materials technologies when attempting to achieve high thermal cycle life reliability over an extended temperature range.