Power Device Packaging Technologies for Extreme Environments

Johnson, Richard W.; Cai, Wei; Liu, Yi; Scofield, James D.

doi:10.1109/tepm.2007.899158

Cited by 93 publications

(28 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…PIs are particularly attractive in the microelectronics industry due to their high thermal stability (Td), high glass transition temperature (Tg), low dielectric constant, high resistivity, high breakdown field, inertness to solvent, radiation resistance, easy processability, etc [2,3]. Recently, the emergence of novel wide bandgap semiconductor (SiC, GaN or Diamond) devices aiming to operate between 200 °C and 400 °C make PIs as one of the most potential organic materials for the surface secondary passivation [4]. In such a high temperature range of operation with large thermal cycling constraints imposed by both the devices and the ambient temperature, the thermomechanical properties of passivation PIs appear as fundamental to ensure long lifetime of the materials and reliable behaviour of the devices.…”

Section: Introductionmentioning

confidence: 99%

BPDA-PDA Polyimide: Synthesis, Characterizations, Aging and Semiconductor Device Passivation

Diaham¹,

Locatelli²,

Khazaka³

2012

High Performance Polymers - Polyimides Based - From Chemistry to Applications

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

BPDA-PDA Polyimide: Synthesis, Characterizations, Aging and Semiconductor Device Passivation

Diaham¹,

Locatelli²,

Khazaka³

2012

High Performance Polymers - Polyimides Based - From Chemistry to Applications

View full text Add to dashboard Cite

“…• Al-, Co-, Fe-, Ni-, and Ti-based alloys [7,10,11,24,43,47,54,65,85,109,154,173,190,191] • Cellular structures [15,91] • Ceramics [114,173] • Metal matrix composites [7,54,93,114,173] • Microcircuitry components [102,104,152,157,173,192,193] • Oxide-dispersion-strengthened alloys [7,24,65,125,126] • Single crystals [3,65] • Stainless steels [25,47,54,85,190] • Structural intermetallics [7,12,47,51,83,85].…”

Section: Applications Of Tlp Bondingmentioning

confidence: 99%

Overview of transient liquid phase and partial transient liquid phase bonding

2011

View full text Add to dashboard Cite

Transient liquid phase (TLP) bonding is a relatively new bonding process that joins materials using an interlayer. On heating, the interlayer melts and the interlayer element (or a constituent of an alloy interlayer) diffuses into the substrate materials, causing isothermal solidification. The result of this process is a bond that has a higher melting point than the bonding temperature. This bonding process has found many applications, most notably the joining and repair of Ni-based superalloy components. This article reviews important aspects of TLP bonding, such as kinetics of the process, experimental details (bonding time, interlayer thickness and format, and optimal bonding temperature), and advantages and disadvantages of the process. A wide range of materials that TLP bonding has been applied to is also presented. Partial transient liquid phase (PTLP) bonding is a variant of TLP bonding that is typically used to join ceramics. PTLP bonding requires an interlayer composed of multiple layers; the most common bond setup consists of a thick refractory core sandwiched by thin, lower-melting layers on each side. This article explains how the experimental details and bonding kinetics of PTLP bonding differ from TLP bonding. Also, a range of materials that have been joined by PTLP bonding is presented.

show abstract

“…With development of the electronic materials and demand for industries such as automotive, aerospace and deep-well drilling, many power devices have to be operated in harsh environment, which needs the corresponding assemblies have excellent thermal reliability even exceeding 300°C [1][2][3]. For example, problems appear when traditional silicon (Si) power devices are operated at temperatures above 200°C, as self-heating at higher power levels results in high internal junction temperatures and leakages; however, some new type wide band-gab semiconductors have much higher maximum operating temperature, for example, silicon carbide (SiC) devices have been demonstrated at 600°C [1,4].…”

Section: Introductionmentioning

confidence: 99%

“…For example, problems appear when traditional silicon (Si) power devices are operated at temperatures above 200°C, as self-heating at higher power levels results in high internal junction temperatures and leakages; however, some new type wide band-gab semiconductors have much higher maximum operating temperature, for example, silicon carbide (SiC) devices have been demonstrated at 600°C [1,4]. It is a challenge for academia and industrial circles to explore appropriate interconnection technology to accommodate this trend.…”

Section: Introductionmentioning

confidence: 99%

Interfacial reaction and mechanical properties for Cu/Sn/Ag system low temperature transient liquid phase bonding

Shao

Bao

et al. 2016

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Low temperature transient liquid phase (LTTLP) bonding is a promising technology to enable in high temperature electronic packaging. In this study, interfacial reaction and mechanical characterizations for Cu/Sn/ Ag system LTTLP bonding at temperatures ranging from 260 to 340°C for various time were investigated. Experimental results showed that Cu and Ag substrate independently reacted with molten Sn, and the growth of IMCs on one side was hindered by the opposite IMCs layer after scalloped Cu 6 Sn 5 contacted with the Ag 3 Sn, and there was no ternary alloy phase formed all the time. Pores were found and distributed at the Cu 6 Sn 5 /Ag 3 Sn interface or between grain boundaries after the residual Sn was fully consumed, however, they gradually disappeared with continuing reaction of that Cu 6 Sn 5 phase converted into Cu 3 Sn phase. Shear strength of the LTTLP joints increased with increasing bonding time, and the adhesive strength of Cu 6 Sn 5 /Ag 3 Sn interface was weaker than that of the Cu 3 Sn/Ag 3 Sn interface. The rupture behaviors were also discussed with a fracture model. As follow, cracks initiated in the pore and mainly propagated along the Cu

show abstract

Power Device Packaging Technologies for Extreme Environments

Cited by 93 publications

References 13 publications

BPDA-PDA Polyimide: Synthesis, Characterizations, Aging and Semiconductor Device Passivation

BPDA-PDA Polyimide: Synthesis, Characterizations, Aging and Semiconductor Device Passivation

Overview of transient liquid phase and partial transient liquid phase bonding

Interfacial reaction and mechanical properties for Cu/Sn/Ag system low temperature transient liquid phase bonding

Contact Info

Product

Resources

About