Overview of transient liquid phase and partial transient liquid phase bonding

Cook, Grant O.; Sorensen, Carl D.

doi:10.1007/s10853-011-5561-1

Cited by 389 publications

(114 citation statements)

References 181 publications

(344 reference statements)

Supporting

Mentioning

102

Contrasting

Unclassified

Order By: Relevance

“…To avoid this problem, SLID bonding, which uses lower bonding temperatures but have a high service temperature, is becoming more and more popular [6]. The basic principle of SLID bonding is to react at a high melting temperature metal with a low melting temperature metal to form high melting point(s) intermetallic compound(s) [7]. Many metal systems had been studied for SLID bonding, including AueSn [8e10], AueIn Refs.…”

Section: Introductionmentioning

confidence: 99%

Au–Sn bonding material for the assembly of power integrated circuit module

Zhu

Liao

et al. 2016

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Au–Sn bonding material for the assembly of power integrated circuit module

Zhu

Liao

et al. 2016

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…The SLID process (also known as transient liquid phase bonding [4][5][6], isothermal solidification [7] or 'off-eutectic bonding' [8]) uses a system of two metals, where one melts at a high temperature (such as Cu, Au, Ag and Ni) and the other melts at a low temperature (such as Sn and In). The bonding process takes place at a temperature somewhat above the lower melting temperature, assuring interdiffusion of the two metals reacting to intermetallic compounds (IMCs) with high-melting points [9] (see Cu-Sn phase diagram in Figure 1 as an example).…”

Section: The Principle Of Slidmentioning

confidence: 99%

Intermetallic Bonding for High-Temperature Microelectronics and Microsystems: Solid-Liquid Interdiffusion Bonding

Aasmundtveit¹,

Luu²,

Nguyen³

et al. 2018

Intermetallic Compounds - Formation and Applications

View full text Add to dashboard Cite

Solid-liquid interdiffusion (SLID) bonding for microelectronics and microsystems is a bonding technique relying on intermetallics. The high-melting temperature of intermetallics allows for system operation at far higher temperatures than what solder-bonded systems can do, while still using similar process temperatures as in common solder processes. Additional benefits of SLID bonding are possibilities of fine-pitch bonding, as well as thin-layer metallurgical bonding. Our group has worked on a number of SLID metal systems. We have optimized wafer-level Cu-Sn SLID bonding to become an industrially feasible process, and we have verified the reliability of Au-Sn SLID bonding in a thermally mismatched system, as well as determined the actual phases present in an Au-Sn SLID bond. We have demonstrated SLID bonding for very high temperatures (Ni-Sn, having intermetallics with melting points up to 1280°C), as well as SLID with low process temperatures (Au-In, processed at 180°C, and Au-In-Bi, processed at 90-115°C). We have verified experimentally the high-temperature stability for our systems, with quantified strength at temperatures up to 300°C for three of the systems: Cu-Sn, Au-Sn and Au-In.Keywords: microelectronics/microsystem assembly, bonding technology, harsh environments, wafer processing, reliability, transient liquid phase © 2018 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Motivation for SLID The challenge of die attach and interconnectionFor all electronic systems, the attachment of components to substrates and their electrical connection is a crucial part of the system. Traditionally, the processes for attachment and interconnection have been considered more a craft than a science. The historical focus of electronics and microtechnology has been on the design, manufacturing and testing of components, circuits and devices, rather than on the system integration and the processes needed for actually building the system. The 'electronic revolution' has given ever-increasing performance of devices at ever-decreasing prices for more than half a century. Initial milestones were the invention of the transistor (1947) and the integrated circuit (IC) (1958). The driving factor has been a continuous decrease in size (of components and on features of components) and cost, made possible through batch processing of silicon wafers. Single-crystal silicon is a very well-defined material with extremely well-characterized properties, allowing process technology that yields extremely small features (10 nm by 2017, with a further decrease expected). Miniaturization of components and the use of large Si wafers give a huge number of components manufactured in every batch, lowering the cost. Furthermore, miniaturization allows an increase in operating frequency (or a decrease...

show abstract

“…A massive and partially open cavity (1) manufactured from bulk Cu was placed on a temperature-controlled heating plate (2). The experimental accuracy was ensured by installing another thermocouple (3) within the Cu bulk material.…”

Section: A Experimental Setup and Processingmentioning

confidence: 99%

“…Isothermal solidification is accompanied by the formation of intermetallic compounds (IMC) at the interfaces during processing and is completed after the liquid material is fully consumed. [2] Interlayers with a X-Sn-X (X = Ni, Cu, Ag, Au) stacking sequence are technically very promising.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Reactive Ni3Sn4 Formation and Growth in Ni-Sn Interlayer Systems

Lis

Kenel

Leinenbach

2016

Metall Mater Trans A

View full text Add to dashboard Cite

The near-isothermal growth and formation of Ni 3 Sn 4 intermetallic compounds (IMC) in Ni-Sn interlayer systems was studied in the solid state at 473 K (200°C) and under solid-liquid conditions at 523 and 573 K (250°C and 300°C) from an initial state of a few seconds. Scalloped solid-state IMC formation was mainly driven by grain boundary diffusion of Ni through the IMC layer combined with the grain coarsening of the IMC layer. Under solid-liquid conditions, the formation of faceted and needle-shaped Ni 3 Sn 4 grains as well as an atypical IMC growth behavior with similar parabolic growth constants for 523 K and 573 K (250°C and 300°C) was observed within the first 180 seconds of the holding time, and IMC growth occurred as an isothermal solidification from the Ni-saturated Sn melt. Due to the progressive densification of the IMC layer and the diffusion-controlled growth, the kinetics slowed down by approximately one order of magnitude after 180 seconds of annealing. The final stage was characterized by the formation of IMC islands ahead of the interfacial Ni 3 Sn 4 layer. Needle-like IMC growth was effectively suppressed under combined solid-state and solid-liquid conditions. Textured Ni 3 Sn 4 IMC formation at the Ni-Sn interface was approved with pole figure measurements. The activation energy Q for solid-liquid IMC formation was calculated as 43.3 kJ/mol, and processing maps for IMC growth and Sn consumption were derived as functions of temperature and time, respectively.

show abstract

Overview of transient liquid phase and partial transient liquid phase bonding

Cited by 389 publications

References 181 publications

Au–Sn bonding material for the assembly of power integrated circuit module

Au–Sn bonding material for the assembly of power integrated circuit module

Intermetallic Bonding for High-Temperature Microelectronics and Microsystems: Solid-Liquid Interdiffusion Bonding

Characteristics of Reactive Ni3Sn4 Formation and Growth in Ni-Sn Interlayer Systems

Contact Info

Product

Resources

About