Nous avons effectué des mesures de conductivité et d'effet Hall entre 4,2 °K et 300 °K sur des couches minces de bismuth évaporées sur un substrat amorphe à température ambiante. Nous avons relié les variations de la constante de Hall à l'existence d'une texture dans les couches et les variations de conductivité avec l'épaisseur à l'influence de la quantification du mouvement des électrons
A new technique has been realized for studying metal migration induced by an electric field in thin metallic stripes. The same experiment allows one to determine the diffusion coefficient, the drift mobility, and the effective charge in the same conditions. A sectioning technique and radiotracers are used. Due to the high sensitivity, the data can be obtained down to the temperatures which are of practical interest for the electronic components. PACS numbers: 66.30.Jt, 82.4S.+z 2743
Using an original radiotracer sectioning technique, we have measured the drift mobility, the diffusion coefficient, and the effective valency of copper in aluminum thin films in the temperature range lOO-lSO·C. The results are interpreted in view of the considerable increase of the lifetime of the electrical contacts on silicon substrates by doping aluminum with copper.
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