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We studied the structure and optical properties of B(4)C/Mo/Y/Si multilayer systems. Using extended x-ray absorption fine structure measurements at the Y and Mo K-edge, the structure of the subnanometer thick Y layer and the underlying Mo layer were analyzed. It was found that even a 0.2 nm thick Y layer significantly reduced silicon diffusion toward Mo, thus reducing Mo silicide formation. Hard x-ray reflectometry showed that the difference in average interface roughness of the B(4)C/Mo/Y/Si multilayer structure compared to Mo/Si and B(4)C/Mo/B(4)C/Si multilayer structures was negligible. Soft x-ray reflectometry showed optical improvement of B(4)C/Mo/Y/Si with respect to Mo/Si and B(4)C/Mo/B(4)C/Si multilayer structures.

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We present low energy ion beam mixing as a tool for the fabrication of composite layers with smooth interfaces. Using this tool we make a stack of alternating layers of Si and MoxSiy. We measure composition and interfacial roughness (σ) and find x/y≊5/3 and σ≊4 Å. The method can be applied to reduce absorption losses in x-ray multilayer mirrors for high-resolution dispersive purposes, and to increase thermal stability of multilayers. The thickness of the mixed layers is found to be equal to the ion range.

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