The application of X‐Ray lithography in mass production of devices is only economically viable if resist materials of highest sensitivity can be provided. Chemical amplification is the key concept to achieve such performance. It is outlined for a highly sensitive three component positive tone X‐Ray resist, consisting of a Novolak binder matrix, a starter compound, which—on X‐Ray exposure—yields an acid, which catalytically decomposes a dissolution inhibitor. Resist performance is discussed in terms of reaction kinetics and their implications on resist response, simulation, and handling procedures.
Highly sensitive resist materials are one of the prerequisites for the economic viability of X-ray and E -beam lithography. The principle of chemical anzphfication coupled with the three -component system (3CS) concept leads the way to the design of highly sensitive, yet as the same time process stable materials which fulfill the requirements of modem semiconductor patterning methods. Two experimental 3CS resist systems using chemical amplification, the positive -tone resist RAY-PF and and the negative -tone resist RAZ PNJJ4, will be presented, and their suitability for X-ray and Ebeam application exa,nined.
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