Negative-tone high-resolution photocatalytic resist for x-ray lithography

Dammel, Ralph R.; Dössel, K.-F.; Lingnau, J.; Theis, J.; Huber, H.-L.; Oertel, H.; Trube, J.

doi:10.1016/0167-9317(89)90123-8

Cited by 19 publications

(4 citation statements)

References 6 publications

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“…AZ PN1 14 and other resists working via acid-catalyzed crosslinking [2] differ from conventional negative-tone systems by their development behavior. In the classical solvent-developed negative-tone systems, structure transfer relies on a thermodynamic effect, i.e.…”

Section: Chemistry and Development Characteristics Of Az Pn114mentioning

confidence: 98%

“…This catalytic dark reaction is not virtually instantaneous, as are the photo-or radiochemical changes in conventional resists; depending on its activation energy, it will proceed at an appreciable rate only at elevated temperatures -as e.g. in the dual-tone t-BOCpolyhydroxystyrene [1] or the negative-tone acidhardening type [2] resists-, or, if the activation energy is very low, it may already occur at ambient temperature, as is the case with the three-component system AZ PF514 [3][4][5][6]. The greatly increased time scale which has to be considered for these reaction kinetics calls for close inspection of the effects of process delays and holding times which might influence the lithographic performance of the resist.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

<title>Process latitude for the chemical amplification resists AZ PF514 and AZ PN114</title>

Eckes¹,

Pawlowski²,

Przybilla³

et al. 1991

Advances in Resist Technology and Processing VIII

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+ European 511kv,, Structures 'ES2,, Zone industrielle, 13016 Rousset adex, France.The effect ofprocess conditions on the pemformnance of the chemically amplified radiation resists AZ PF514 (positive tone) and.AZ PNJJ4 (negative tone) has been examinedfor both X-ray and E-beam application. For the positive tone resist, it is found that mandatory atmospheric holding times for the catalytic reaction can be made redundant be the introduction of a post exposure bake at moderate temperature, yielding high exposure latitude, good linearity amid a reduction of timedependent effects. In particular, metal-ion free developers yield highly vertical resist sidewalls evenfor high overdoses. The sensitivity drfi with increasing residence time in a vacuum (e.g. during E-beam exposure) may be counteracted by a simple DUV flood exposure which moreover may serve to control line shape and wall angle. Enhanced thy-etch stability and linearity may be obtained by means of an optimized DUV hardening process. The negative tone resist AZ PNI14 is shown to be little sensitive to vacuum effects; thermal stability amid dl)' etching properties are found to be superior. Results are presented for X-ray and shaped E-beam exposures.

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Section: Chemistry and Development Characteristics Of Az Pn114mentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

<title>Process latitude for the chemical amplification resists AZ PF514 and AZ PN114</title>

Eckes¹,

Pawlowski²,

Przybilla³

et al. 1991

Advances in Resist Technology and Processing VIII

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show abstract

“…The resolution and sensitivity of the chemically amplified resists are strongly dependent on the PEB conditions since the crosslinking reaction leading to solubility differentiation proceeds at measurable rates only above a certain critical temperature [9]. Post exposure bake was carried out in an oven for both the AZPN1 14 and the EPR resists.…”

Section: Post Exposure Bake and Developmentmentioning

confidence: 99%

Dry-etch characteristics of chemically amplified and onium-salt-sensitized electron-beam resists

Huq

Prewett

1994

SPIE Proceedings

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Electron beam resists having high sensitivity and high resistance to dry etching are under investigation for sub-half micron device production using 5x reticle masks. The effects of dry etch process conditions on the performance of the novolac based chemically amplified AZPN1 14 and onium salt sensitised EPR resist have been investigated at 2OkeV and lOkeV electron beam energies using an electron beam microfabricator under a range of dose, post-exposure bake and development conditions. Linewidths in the range from 4j.tm down to O.2j.tm have been evaluated. Pattern transfer to chromium on quartz was carried out in a commercial reactive ion etcher. A comprehensive series of RIE experiments were devised and analysed using a commercial statistical software package. This allowed exploration of the multivariable space comprising the plasma process parameters such as gas flow rates, gas pressure and the critical chromium and resist etch rates. This approach enabled the ifiE process to be optimised for the resists used and demonstrated the critical dependence of chromium/resist selectivity on gas composition, pressure and etch power. CD measurements on resist lines and also on chromium lines after dry etch, were carried out both in a field emission SEM and with a calibrated optical linewidth measuring system. A focused ion beam system was used to microsection selected resist lines on chromium and dry etched chromium lines for edge profile inspection.

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“…The sensitivities of the chemically amplified resists tend to suffer from impurities and to depend on prebake temperature, prebake time, post exposure bake (PEB) temperature, PEB time, delay time from exposure to development, and shelf life, and so on. Although many papers have been reported on effects of impurities [1][2][3][4][5], prebake [5][6][7], PEB [5][6][7][8][9][10][11][12][13], and delay time [3,9,10] on resist materials and processes in EB lithography, only a few attempts have so far been made on the reaction mechanisms in chemically amplified EB resists. It is important to solve the reaction mechanisms for the development and improvement of resists.…”

Section: Introductionmentioning

confidence: 99%

Studies on Reaction Mechanisms of EB Resist by Pulse Radiolysis.

Tsuji

Kozawa

Yamamoto

et al. 2000

J. Photopol. Sci. Technol.

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For development and improvement of chemically amplified resists, the mechanisms of acid-generation reactions and the matrix effects were studied by using a pulse radiolysis technique. Ionic and nonionic acid generators act as electron scavengers when irradiated with an ionizing radiation in methanol solutions, resulting in the formation of Br4nsted acids. Rate constants for the reactions of the acid generators with a solvated electron have been detennined. The rate constants of the onium salts were in the range of (1.6-2.7) x 1010 M' s. The nonionic acid generators were also found to be highly reactive to the solvated electron. Regardless of the structures and the polarities, the acid generators contribute to the acid generation by scavenging the solvated electron with the rates close to the diffusion-controlled limit. The reaction of acid generator with electrons trapped by base polymer was clarified. It would appear that electron scavenging reaction by acid generator in chemically amplified EB resist have two processes, and both process contribute to acid generation mechanism.

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Negative-tone high-resolution photocatalytic resist for x-ray lithography

Cited by 19 publications

References 6 publications

<title>Process latitude for the chemical amplification resists AZ PF514 and AZ PN114</title>

<title>Process latitude for the chemical amplification resists AZ PF514 and AZ PN114</title>

Dry-etch characteristics of chemically amplified and onium-salt-sensitized electron-beam resists

Studies on Reaction Mechanisms of EB Resist by Pulse Radiolysis.

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