The present work investigates the effect of precursor concentration (m c) on the structural, optical, morphological and electrical conductivity properties of In 2 S 3 thin films grown on amorphous glass substrates by nebulized spray pyrolysis (NSP) technique. The mixed phase of cubic and tetragonal structure of In 2 S 3 thin films at higher concentration has been observed by X-ray diffraction pattern. The reduced strain by increasing the precursor concentration increased the average crystallite from 17.8 to 28.9 nm. The energy dispersive analysis by X-ray (EDAX) studies confirmed the presence of In and S. The transmittance, optical direct band gap energy, Urbach energy and skin depth of In 2 S 3 films have been analyzed by optical absorption spectra. The better conductivity and mobility noticed at m c = 0.15 M are explained by carrier concentration and crystallite. Better optical and electrical conductivity behaviour of In 2 S 3 thin film sample proposes for effective solar cell fabrication.
Tin disulfide thin films were prepared with different molarities of tin species (M Sn ) at the optimized substrate temperature using the Nebulized Spray pyrolysis technique to obtain better crystallinity with mono phase thin films. The concentration of Tin IV chloride Penta hydrate precursor is varied from 0.05:0.4 to 0.25:0.4 (SnCl 4 .5H 2 O: thiourea) to achieve correct stoichiometry and to tune the concentration of Tin ions in the SnS 2 thin films. These films were well adherent, uniform, and shiny. Lower concentrations of Tin yields highly textured SnS 2 thin films with (001) crystallite orientation. On increasing the concentration, the multi-phases (SnS and Sn 2 S 3 ) were found to be present along with SnS 2 material. The platelet-like grains were observed from SEM analysis in these SnS 2 films. Multiple interference effects were predominant in all these thin films in the wavelength region of 600-1100 nm. The direct optical band gap of tin disulfide thin films had decreased from 3.2 eV to 2.75 eV with an increase in M Sn from 0.05 to 0.2 M, respectively, and further increased to 3.0 eV for 0.25 M concentration. Using Hall Effect measurement, the type of semiconductor is found to be of n-type. A minimum resistivity value of 2.19 × 10 3 Ω cm was obtained for the film grown at M Sn = 0.2 M.ARTICLE HISTORY
In this work, we present the substrate temperature influenced change in the structural, optical, morphological, and electrical conductivity properties of CdIn 2 S 4 thin films deposited on amorphous glass substrates by nebulized spray pyrolysis (NSP) technique. X-ray diffraction pattern revealed that the asdeposited CdIn 2 S 4 thin films had a cubic structure with a preferred orientation along (111) plane. The reduced strain by increasing the substrate temperature from 200 to 350 • C increased the average crystalline size from 17 to 33 nm while the formation of secondary phases such as CdIn 2 O 4 and In 2 O 3 reduced it to 21 nm after the substrate temperature at 450 • C. The energy dispersive analysis by X-ray (EDAX) studies confirmed the presence of Cd, In, and S. The absorption coefficient, direct band gap energy, Urbach energy, skin depth, and extinction coefficient of CdIn 2 S 4 films were analyzed by optical absorption spectra. The better conductivity and mobility noticed at T s = 350 • C are explained by carrier concentration and crystalline size. Better optical and electrical conductivity behavior of CdIn 2 S 4 thin film sample suggests for effective PEC solar cell fabrication.
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