Effect of precursor concentration on physical properties of nebulized spray deposited In<sub>2</sub>S<sub>3</sub> thin films

Mohamed, J. Raj; Amalraj, L.

doi:10.1016/j.jascer.2016.07.002

Cited by 73 publications

(13 citation statements)

References 40 publications

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“…The decrease in the optical transmittance can be explained by the improvement in the optical absorption rate. This can be due to the increase in the average grain size and the decrease in granular boundaries, with the increase in copper solution molarity [17], as mentioned in AFM results and Figure-2. These films may be used in electronic applications, as in the optical windows that have effective regions within the visible spectrum range.…”

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confidence: 68%

Copper Molarity Effect on the Optical Properties of Cu2CdSnS4 Quaternary Thin Films

Abdo

Rzaij

2021

eijs

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The quaternary alloy of Cu2CdSnS4 (CCSS) is one type of thin film materials that contributes to the field of photovoltaic devices manufacturing, the importance of which has not been commonly enlightened as most of the other materials. For the preparation of CCSS thin films at 350 °C on glass substrates, the chemical spray pyrolysis technique was used. The optical properties of thin films prepared under the influence of the variation of copper solution molarity (0.03, 0.05, 0.07, and 0.09 M) on the quaternary compound were examined using a UV-vis spectrophotometer. The findings of the AFM study showed the atoms on the surface that are acclimatized in the form of nanorods with an increase in the average grain size from 62.72 to 79.17 nm. The results also showed an improvement in the average surface roughness from 5.69 to 12.8 nm when copper concentration increased from 0.03 to 0.09 M. The UV-vis results showed that the optical transmittance of CCSS decreases by increasing the solution molarity of copper, with a change in the absorption edge toward the low energy side (redshift). With an increase in the wavelength between 725 and 960 nm, a low absorption coefficient was found in the infrared region, while a strong absorption coefficient in the visible range was observed with the increase in copper solution molarity. The energy gap values decreased from 1.6 to 1.47 eV when copper solution molarity increased from 0.03 to 0.09 M. By raising copper solution molarity to 0.09 M, the refractive index at the absorption edge was increased from 1.6 to 1.97, while the extinction coefficient reduced.

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confidence: 68%

Copper Molarity Effect on the Optical Properties of Cu2CdSnS4 Quaternary Thin Films

Abdo

Rzaij

2021

eijs

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“…Both cubic and tetragonal phases were identified with a change in the preferred orientation from (300) to (111) for films annealed at 200°C. The existence of both tetragonal and cubic phases of In 2 S 3 is most commonly observed in the literature for In 2 S 3 thin films, irrespective of the deposition techniques used [22,[27][28][29]. For films annealed at 250°C, the secondary tetragonal phase was completely suppressed and only cubic phase with an intense (111) plane was observed as the preferred orientation with better crystallinity.…”

Section: Structural Analysis Figures 1(a) and (B)mentioning

confidence: 84%

Annealing and plasma treatment effect on structural, morphological and topographical properties of evaporated β-In₂S₃ films

Rasool

Saritha

Reddy

et al. 2020

Mater. Res. Express

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Indium sulfide (In 2 S 3 ) is a wide bandgap semiconductor, which is widely used as a window/buffer layer in thin film solar cell applications. In 2 S 3 thin films were deposited using thermal evaporation technique and were annealed in sulfur ambient at 200°C and 250°C. Further, these films were treated in inductively coupled argon plasma sputtering with an average argon ion energy of 75 eV for 30 s. The paper presents the effect of Ar-plasma treatment on structure, elemental composition, morphology and topography of In 2 S 3 films and the results were reported. Further, the optimized In 2 S 3 layers were continued for plasma etching process with an average argon ion energy of 25 eV to study the effect of plasma etching duration on the growth of metallic indium nanoparticles over the film surface and the results were discussed in detail.

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“…The spread of the energy levels within the band gap, which originates because of the defects in the samples, can be obtained through the estimation of the Urbach energy . The inverse of the slope of the linear region in ln( F ( R )) versus incident energy ( h ν) plot gives the Urbach energy (the middle panel in Figure S6).…”

Section: Resultsmentioning

confidence: 99%

Ni Nanoparticles Coated with Nitrogen-Doped Carbon for Optical Limiting Applications

Kumar

Verma

et al. 2020

ACS Appl. Nano Mater.

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In this work, we demonstrate the importance of the free carrier absorption (FCA) process in the nonlinear optical absorption (NLA) behavior of carbonaceous nanomaterials synthesized by pyrolysis at different heating rates (R h = 1, 3, 10, and 20 °C/min). The chemical vapor deposition reaction through the pyrolysis of Ni(II) acetylacetonate, melamine, and toluene precursors was carried out at 600 °C, which leads to different carbonaceous nanostructures embedded with graphite-encapsulated Ni nanoparticles (Ni@C samples). A lower R h (1 and 3 °C/min) value leads to the formation of globular carbon aggregates embedded with core−shell-type Ni−graphite nanoparticles, whereas a high R h (10 and 20 °C/min) value leads to the formation of carbon nanotubes embedded with similar Ni−graphite core−shell nanoparticles. The samples prepared at moderate heating rates of 3 and 10 °C/min show prominently high NLA than those prepared at very slow or very fast (1 and 20 °C/min) heating rates. According to our results, the quality (and the amount) of graphitization and nitrogen defect centers enhance the NLA behavior of the Ni@C samples. This result is obtained through the enhancement of excited-state absorption (ESA) behavior of the samples due to the introduction of defect states within the band gap of the graphite layer. More importantly, the metallic Ni nanoparticles help in drastically enhancing the NLA through the FCA process. To prove this supposition, we demonstrated that the presence of any dielectric phase (e.g., NiO) within the metallic nanoparticles (or within the sample) acts as a barrier to FCA, thereby reducing the NLA. Our work highlights the importance of synthesis conditions (optimized heating rate), especially in controlling the quality of graphitization and the embedded metallic Ni particles in the Ni@C samples in enhancing the NLA. Furthermore, through the mechanistic insights, we emphasized the potential use of our Ni@C samples for optical limiting applications because of their excellent NLA behavior originating through the FCA and ESA processes.

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Effect of precursor concentration on physical properties of nebulized spray deposited In₂S₃ thin films

Cited by 73 publications

References 40 publications

Copper Molarity Effect on the Optical Properties of Cu2CdSnS4 Quaternary Thin Films

Copper Molarity Effect on the Optical Properties of Cu2CdSnS4 Quaternary Thin Films

Annealing and plasma treatment effect on structural, morphological and topographical properties of evaporated β-In₂S₃ films

Ni Nanoparticles Coated with Nitrogen-Doped Carbon for Optical Limiting Applications

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Effect of precursor concentration on physical properties of nebulized spray deposited In2S3 thin films

Cited by 73 publications

References 40 publications

Copper Molarity Effect on the Optical Properties of Cu2CdSnS4 Quaternary Thin Films

Copper Molarity Effect on the Optical Properties of Cu2CdSnS4 Quaternary Thin Films

Annealing and plasma treatment effect on structural, morphological and topographical properties of evaporated β-In2S3 films

Ni Nanoparticles Coated with Nitrogen-Doped Carbon for Optical Limiting Applications

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Product

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Effect of precursor concentration on physical properties of nebulized spray deposited In₂S₃ thin films

Annealing and plasma treatment effect on structural, morphological and topographical properties of evaporated β-In₂S₃ films