A new low-temperature process that anneals out ion-implantation damage and activates the dopant in extremely shallow, implanted n+/p structures is presented. This technique employs low-energy (0.4 keV) H+ ion implantation following arsenic ion implantation and then a subsequent low-temperature (500–600 °C) furnace anneal. Very little dopant redistribution takes place with this new process and the device characteristics are comparable to other processes employing short-time, higher-temperature anneals.
Pseudomorphic-strained layers containing from 0.07-1.25 atomic % Ge were formed by ion implantation at 1000°C into 4H-SiC substrates. X-ray diffraction revealed high crystalline quality and coherent interfaces for strains up to 1.4%. Infrared reflectivity indicated a phonon mode at 948 cm −1 , attributed to Ge implantation disorder. Annealing above 1250°C caused the disappearance of the 948 cm −1 disorder mode, and the strengthening of the phonon mode at 848 cm −1 , associated with the 4H stacking sequence. Structural measurements of the annealed samples revealed thermally stable, coherently strained layers of the 4H polytype, without precipitation, suggesting an isoelectronic Ge alloy compatible with SiC for heterostructure strained layer engineering.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.