A low-temperature process for annealing extremely shallow As+-implanted n+/p junctions in silicon

Abstract

A new low-temperature process that anneals out ion-implantation damage and activates the dopant in extremely shallow, implanted n+/p structures is presented. This technique employs low-energy (0.4 keV) H+ ion implantation following arsenic ion implantation and then a subsequent low-temperature (500–600 °C) furnace anneal. Very little dopant redistribution takes place with this new process and the device characteristics are comparable to other processes employing short-time, higher-temperature anneals.

Schottky barrier MOSFETs with epitaxial ferromagnetic MnAs/Si(001) source and drain: Post-growth annealing and transport characteristics

“…Thus, the improvement of S value at T A ¼ 400 and 500 1C was due to the change in the transport properties of the MnAs/Si junction. One possible origin is the interfacial modification through the activation of As atoms existing in the SOI layer [3,10]. The different junction properties also reflect the drain-source current (I DS )-the drain-source voltage (V DS ) characteristics in Fig.…”

Untitled

“…To such phenomena, we can relate: 1) suppressing the swirl defect creation under silicon growth in the hydrogen ambient [102]; 2) hydrogen-enhanced thermal donor creation in the hydrogen atmosphere or under hydrogen plasma treatment [103,104]; 3) enhanced annealing of radiation defects in hydrogenated crystalline silicon [105] and under RF plasma treatment [14]; 4) enhanced dopant activation under RF plasma effect [15] or additional hydrogen implantation with following thermal annealing [106,107]. A specific peculiarity of these phenomena is the lack of the restoration of defect properties after the following thermal annealing.…”

Hydrogen in semiconductors

“…For example, the processes in which the electrically active defects (deep levels) are introduced are etching (chemical, reactive ion and sputter), annealing (laser and thermal), quenching, ion-implantation and irradiation with photons or particles with energies sufficient enough to cause atomic displacements. All such deep levels have been influenced on hydrogenation to show a hydrogen passivating effect (Pearton 1982;Singh et al 1984;Mu et al 1986a, b;Pearton et al 1992).…”