We report on the growth of 980-nm strained-layer InGaAs/GaInAsP/GaInP separated confinement quantum well lasers using all solid source molecular beam epitaxy. Valved cracker cells were employed for both phosphorus and arsenic. Fabricated lasers exhibited excellent performance that is comparable to similar lasers grown by gas source molecular beam epitaxy in our laboratory. A maximum output power of 450 mW and over 250 mW in single mode operation was achieved for ridge waveguide lasers with AR/HR coated facets.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.