Aluminum-free 980-nm GaInAs/GaInAsP/GaInP pump lasers

Asonen, H.; Ovtchinnikov, A.; Zhang, Guodong; Nappi, J.; Savolainen, P.; Pessa, M.

doi:10.1109/3.283789

Cited by 41 publications

(21 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[8][9][10] To minimize this problem, higher band-gap InGaAsP confinement layers and multiple quantum wells are used to reduce carrier leakage, and thus reduce temperature sensitivity.…”

mentioning

confidence: 99%

mentioning

confidence: 99%

“…[8][9][10] To minimize this problem, higher band-gap InGaAsP confinement layers and multiple quantum wells are used to reduce carrier leakage, and thus reduce temperature sensitivity. [9][10][11][12] The interface structure of InGaAs quantum wells on InGaAsP, integral to these improved structures, has however not been studied. In this letter, we report on the effects of substrate misorientation on the growth of strained-layer In 0.18 Ga 0.82 As quantum wells with In 0.29 Ga 0.71 As 0.4 P 0.6 ͑1.62 eV band gap͒ confinement layers and InGaP cladding layers lattice matched to a GaAs substrate.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates

Bhattacharya

Mawst

Nayak

et al. 1996

Applied Physics Letters

View full text Add to dashboard Cite

We have studied the effects of substrate misorientation on the growth of strained-layer In 0.18 Ga 0.82 As quantum well laser structures with InGaAsP confinement layers and In 0.5 Ga 0.5 P cladding layers lattice matched to a GaAs substrate. Low-temperature photoluminescence ͑PL͒ and atomic force microscopy ͑AFM͒ provide evidence of a strong substrate-orientation dependence of the interface structure. The surface morphology of the InGaAs quantum well is found to be determined primarily by the underlying InGaAsP confinement layer. Structures grown on exact-͑100͒ oriented substrates exhibit three-dimensional island surface morphology, whereas growths on ͑100͒ substrates oriented 2°towards ͓110͔ exhibit high surface roughness, possibly due to step bunching. These observations correlate well with previously reported device performance from strained quantum well laser diodes in the InGaAs/InGaAsP/InGaP material system, and can serve as a tool to optimize device performance. © 1996 American Institute of Physics. ͓S0003-6951͑96͒03716-0͔The aluminum-free InGaAs/InGaAsP/InGaP material system is increasingly important for the fabrication of semiconductor lasers. The advantages of using the Al-free system for laser diodes over the conventional AlGaAs-based material system are: ͑1͒ low surface recombination 1 in this material system results in lower facet temperatures in laser diodes, permitting reliable operation at high output powers, ͑2͒ higher electrical, 2 and thermal 3 conductivity of InGaP cladding layers results in better total power-conversion efficiencies at high powers, and ͑3͒ novel index-guided structures can be easily fabricated due to the absence of aluminum containing compounds at the regrowth interface.4 Optimization of such devices however requires an understanding of the nature of quantum well ͑QW͒ growth in this material system. Recently, studies relating interface structure to photoluminescence ͑PL͒ spectra have been carried out for quantum well AlGaAs/GaAs, 5 strained InGaAs/GaAs ͑Ref. 6͒ and InGaAs/InP ͑Ref. 7͒ structures. Interface studies by atomic force microscopy ͑AFM͒ on MOVPE-grown ͑In,Ga͒͑As,P͒ materials, have mainly focused on growth mechanisms; few studies have correlated interface structure with device performance. Furthermore, the interfacial structure of strainedlayer InGaAs/InGaAsP QW structures has not been reported.Al-free lasers with GaAs or low-band-gap InGaAsP confinement layers exhibit strong carrier leakage from the InGaAs QW to the optical confinement layers, resulting in a strong temperature dependence of both threshold current and differential quantum efficiency. [8][9][10] To minimize this problem, higher band-gap InGaAsP confinement layers and multiple quantum wells are used to reduce carrier leakage, and thus reduce temperature sensitivity.9-12 The interface structure of InGaAs quantum wells on InGaAsP, integral to these improved structures, has however not been studied. In this letter, we report on the effects of substrate misorientation on the growth of strained-layer In 0....

show abstract

“…[8][9][10] To minimize this problem, higher band-gap InGaAsP confinement layers and multiple quantum wells are used to reduce carrier leakage, and thus reduce temperature sensitivity.…”

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

See 1 more Smart Citation

Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates

Bhattacharya

Mawst

Nayak

et al. 1996

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…[7][8][9] To circumvent this problem, the use of higher band-gap InGaAsP confinement layers and multiple quantum wells have been used to reduce carrier leakage, and thereby reduce temperature sensitivity. [8][9][10][11] Optimization of such laser structures requires an understanding of the nature of quantum-well growth for the InGaAs/InGaAsP/InGaP material system.Recently, Hiramoto et al 12 have shown that the photoluminescence ͑PL͒ intensity and linewidth of InGaAs/GaAs quantum-well ͑QW͒ structures grown by MOCVD is strongly dependent on substrate misorientation, due to stepbunching effects on vicinal substrates. However, no study has been undertaken on the influence of substrate misorientation on the optical properties of InGaAs/InGaAsP/InGaP QW structures grown by MOCVD on GaAs substrates.…”

mentioning

confidence: 99%

“…Al-free lasers with GaAs or low-band-gap InGaAsP confinement layers exhibit strong carrier leakage from the InGaAs quantum well to the ͑optical͒ confinement layers, resulting in a strong temperature dependence of both I th and d . [7][8][9] To circumvent this problem, the use of higher band-gap InGaAsP confinement layers and multiple quantum wells have been used to reduce carrier leakage, and thereby reduce temperature sensitivity. [8][9][10][11] Optimization of such laser structures requires an understanding of the nature of quantum-well growth for the InGaAs/InGaAsP/InGaP material system.…”

mentioning

confidence: 99%

High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation

Mawst

Bhattacharya

Nesnidal

et al. 1995

Applied Physics Letters

View full text Add to dashboard Cite

3 W cw output power has been obtained from aluminum-free, strained-layer double-quantum well ͑DQW͒ InGaAs/InGaAsP/InGaP uncoated, 100-m-wide stripe diode lasers ͑ϭ0.945 m͒ grown by low-pressure MOCVD on exact ͑100͒ GaAs substrates. The combination of high-band-gap ͑1.62 eV͒ InGaAsP confinement layers and the DQW structure provides relatively weak temperature dependence for both the threshold current I th as well as the external differential quantum efficiency d . Furthermore, the series electrical resistance for 100 mϫ600 m stripe-contact devices is as low as 0.12 ⍀. As a result, the power conversion efficiency reaches a maximum of 40% at 8 ϫI th , and decreases to only 33% at the maximum power ͑i.e., 3 W͒ at 28ϫI th . Low-temperature ͑12 K͒ photoluminescence measurements of InGaAs/InGaAsP quantum-well structures exhibit narrow linewidths ͑Ͻ10 meV͒ for material grown on exact ͑100͒ GaAs substrates, while growths on misoriented substrates exhibit linewidth broadening, as a result of ''step bunching.'' Laser structures grown on misoriented substrates exhibit increased temperature sensitivity of both I th and d , compared with structures grown on exact ͑100͒ substrates. © 1995 American Institute of Physics.Strained-layer quantum-well InGaAs lasers ͑980 nm͒ are needed as high-output-power pump sources for Er-doped fiber and waveguide amplifiers as well as for fluoride-fiberbased frequency upconversion. The use of the aluminum-free InGaAs/InGaAsP/InGaP material system has several advantages over the InGaAs/GaAs/AlGaAs material system for the realization of reliable, high-power diode sources: ͑1͒ the low reactivity of InGaP to oxygen facilitates regrowth for the fabrication of single-mode index-guided structures, 1,2 ͑2͒ higher electrical and thermal conductivity compared with AlGaAs, 3 and ͑3͒ lasers with AlGaAs cladding layers and unpassivated facets show higher facet degradation than similar lasers with InGaP cladding layers, 4 presumably due to the lower surface recombination velocity of InGaP 5 compared with AlGaAs. Al-free lasers also exhibit an order of magnitude lower facet temperature rise compared with devices containing AlGaAs in both the confining and cladding layers. 6 Although high performance has been demonstrated from Al-free laser structures, the characterization of the quantum-well growth for this material system and its influence on device performance have not been established.Achieving high cw output power requires weak temperature dependence of both the threshold current, I th , and differential quantum efficiency, d which in turn are influenced by carrier leakage from the quantum well͑s͒. Al-free lasers with GaAs or low-band-gap InGaAsP confinement layers exhibit strong carrier leakage from the InGaAs quantum well to the ͑optical͒ confinement layers, resulting in a strong temperature dependence of both I th and d . [7][8][9] To circumvent this problem, the use of higher band-gap InGaAsP confinement layers and multiple quantum wells have been used to reduce carrier leakage, and thereby reduce temp...

show abstract

Design Considerations for High‐Power Single Spatial Mode Operation

Epperlein¹

2013

Semiconductor Laser Engineering, Reliability and Diagnostics

View full text Add to dashboard Cite

Aluminum-free 980-nm GaInAs/GaInAsP/GaInP pump lasers

Cited by 41 publications

References 34 publications

Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates

Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates

High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation

Design Considerations for High‐Power Single Spatial Mode Operation

Contact Info

Product

Resources

About