All solid source molecular beam epitaxy growth of 1.35 µm wavelength strained-layer GaInAsP quantum well laser

Toivonen, M.; Salokatve, A.; Jalonen, M.; Nappi, J.; Asonen, H.; Pessa, M.; Murison, R.

doi:10.1049/el:19950526

Cited by 31 publications

(12 citation statements)

References 4 publications

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“…The more detailed description of our growth system and procedures can be found elsewhere. 12,13 A schematic diagram of the laser structure is shown in Fig. 1.…”

Section: Methodsmentioning

confidence: 99%

All solid source molecular beam epitaxy growth and characterization of strain-compensated 1.3 μm InAsP/InGaP/InP multiquantum well lasers for high-temperature operation

Toivonen¹

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The more detailed description of our growth system and procedures can be found elsewhere. 12,13 A schematic diagram of the laser structure is shown in Fig. 1.…”

Section: Methodsmentioning

confidence: 99%

All solid source molecular beam epitaxy growth and characterization of strain-compensated 1.3 μm InAsP/InGaP/InP multiquantum well lasers for high-temperature operation

Toivonen¹

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The growth procedure is described elsewhere. 1,9 The laser structures are shown schematically in Fig. 1.…”

Section: Effects Of Rapid Thermal Annealing On Gainp/algainp Lasers Gmentioning

confidence: 99%

Effects of rapid thermal annealing on GaInP/AlGaInP lasers grown by all-solid-source molecular beam epitaxy

Jalonen

Toivonen

Savolainen

et al. 1997

Applied Physics Letters

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“…Phosphorus containing device structures have now been grown by MBE including the PIN diode, 5 multiquantum well Bragg reflector, 6 heterojunction bipolar transistor ͑HBT͒, 7,8 and multiquantum well laser. 9 This work presents results obtained for two high-electron mobility transistor ͑HEMT͒ structures containing phosphide films grown by solid source MBE on InP substrates. InAlAs/ InGaAs HEMT films have been grown incorporating a thin, strained InAlP Schottky layer.…”

Section: Introductionmentioning

confidence: 99%

In1−xAlxP/InAlAs/InGaAs and InAlAs/InAs0.3P0.7 high-electron mobility transistor structures grown by solid source molecular beam epitaxy

Hoke

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inSolid source molecular beam epitaxy of low threshold 1.55 μm wavelength GaInAs/GaInAsP/InP semiconductor lasers J.Effect of interface defect formation on carrier diffusion and luminescence in In0.2Ga0.8As/Al x Ga1−x As quantum wells All solid source molecular beam epitaxy growth and characterization of strain-compensated 1.3 μm InAsP/InGaP/InP multiquantum well lasers for high-temperature operation InP-based high-electron mobility transistor ͑HEMT͒ structures have been grown containing strained In 1Ϫx Al x P Schottky layers with xϭ0.15-0.25. The band gaps of the strained layers in the HEMT structure were determined by photoreflectance spectroscopy. For xϭ0.15, Hall mobilities were comparable to those obtained in an analogous InAlAs/InGaAs structure. Lower mobilities were obtained with higher x value. Misfit dislocations were observed in plan view transmission electron microscopy for xϭ0.25 but not xϭ0.15. HEMT structures were also grown with InAsP channel layers containing moderate sheet densities. Photoluminescence measurements of the quantum well region indicated transitions to two electronic subbands. The InAs 1Ϫx P x composition was found to be weakly dependent on the phosphorus flux and uniform on 2 in. wafers.

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All solid source molecular beam epitaxy growth of 1.35 µm wavelength strained-layer GaInAsP quantum well laser

Cited by 31 publications

References 4 publications

All solid source molecular beam epitaxy growth and characterization of strain-compensated 1.3 μm InAsP/InGaP/InP multiquantum well lasers for high-temperature operation

All solid source molecular beam epitaxy growth and characterization of strain-compensated 1.3 μm InAsP/InGaP/InP multiquantum well lasers for high-temperature operation

Effects of rapid thermal annealing on GaInP/AlGaInP lasers grown by all-solid-source molecular beam epitaxy

In1−xAlxP/InAlAs/InGaAs and InAlAs/InAs0.3P0.7 high-electron mobility transistor structures grown by solid source molecular beam epitaxy

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