All solid source molecular beam epitaxy growth and characterization of strain-compensated 1.3 μm InAsP/InGaP/InP multiquantum well lasers for high-temperature operation

Toivonen, M.

doi:10.1116/1.588549

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

1996

DOI: 10.1116/1.588549

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All solid source molecular beam epitaxy growth and characterization of strain-compensated 1.3 μm InAsP/InGaP/InP multiquantum well lasers for high-temperature operation

M. Toivonen¹

Abstract: Articles you may be interested inSolid source molecular beam epitaxy of low threshold 1.55 μm wavelength GaInAs/GaInAsP/InP semiconductor lasers J.Effect of interface defect formation on carrier diffusion and luminescence in In0.2Ga0.8As/Al x Ga1−x As quantum wells

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Cited by 13 publications

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All solid source molecular beam epitaxy growth and characterization of strain-compensated 1.3 μm InAsP/InGaP/InP multiquantum well lasers for high-temperature operation

Abstract: Articles you may be interested inSolid source molecular beam epitaxy of low threshold 1.55 μm wavelength GaInAs/GaInAsP/InP semiconductor lasers J.Effect of interface defect formation on carrier diffusion and luminescence in In0.2Ga0.8As/Al x Ga1−x As quantum wells

Cited by 13 publications

References 8 publications

Solid source MBE growth of InAsP/InP quantum wells

Solid source MBE growth of InAsP/InP quantum wells

Arsenic incorporation in InAsP/InP quantum wells

Characteristics of strain compensated 1.3μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE

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