Arsenic incorporation in InAsP/InP quantum wells

Dagnall, G.; Brown, April S.; Stock, Stuart R.

doi:10.1007/s11664-999-0246-0

Cited by 5 publications

(1 citation statement)

References 16 publications

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“…The phosphorus desorption coefficient is approximately 100 times higher than the arsenic desorption coefficient; therefore, arsenic accumulates on the surface [17][18]. Arsenic atoms actively form bonds with indium atoms [19][20] and form the binary InAs in the places of In accumulation. From the change in the concentration of arsenic atoms on the surface with annealing time, one can estimate the number of phosphorus atoms (N P ) desorbed from the surface, and calculate the flow of phosphorus desorbed from the surface (υ p ) at different temperatures.…”

Section: Figurementioning

confidence: 99%

Determination of the phosphorus desorption rate during high-temperature annealing of the InP(001) substrate in an arsenic flux

Kolosovsky

Дмитриев

Ponomarev

et al. 2022

J. Phys.: Conf. Ser.

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In this work, the process of phosphorus desorption from epi-ready InP(001) substrates during high-temperature annealing in an arsenic flux was experimentally investigated. An InPAs solid solution and InAs islands were formed on the surface upon annealing. The composition of the solid solution, the surface area fraction occupied by InAs islands, and its height depend on the annealing temperature. The phosphorus desorption rate was determined from the dependence of the arsenic atoms number on the substrate surface on the annealing temperature and the holding time in the arsenic flux. The phosphorus desorption rate increased from 6.03×1010 s−1⋅ cm−2 at an annealing temperature of 500 °C to 4.38×1011 s−1 ⋅ cm−2 at 540 °C. The activation energy of the phosphorus desorption process was 2.7 ± 0.2 eV.

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Section: Figurementioning

confidence: 99%

Determination of the phosphorus desorption rate during high-temperature annealing of the InP(001) substrate in an arsenic flux

Kolosovsky

Дмитриев

Ponomarev

et al. 2022

J. Phys.: Conf. Ser.

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Studies on incorporation of As2 and As4 in III–V compound semiconductors with two group V elements grown by molecular beam epitaxy

Hao¹,

Ren²,

Guo³

et al. 2001

Journal of Crystal Growth

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Thermally detected optical absorption, reflectance, and photoreflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy

Disseix¹,

Payen²,

Leymarie³

et al. 2000

Journal of Applied Physics

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This work reports an extensive optical study of a series of In(As,P)/InP strained quantum wells grown by gas source molecular beam epitaxy with various thicknesses and compositions. Thermally detected optical absorption, reflectance, and photoreflectance measurements have been performed in order to determine all the exciton energies. An envelope function model including band nonparabolicity, intervalence band coupling, and also possible group V element exchange at the interfaces, is used to interpret the experimental data. The fit of the optical transition energies leads to an accurate determination of the crucial structural and optical parameters. The arsenic concentration inside the wells is evaluated and the conduction band offset ratio (Qc=0.70) as well as the bowing parameter of In(As,P) (C=0.14 eV) are determined. These studies also provide useful information about the nanometer-scale P–As interface mixing.

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Arsenic incorporation in InAsP/InP quantum wells

Cited by 5 publications

References 16 publications

Determination of the phosphorus desorption rate during high-temperature annealing of the InP(001) substrate in an arsenic flux

Determination of the phosphorus desorption rate during high-temperature annealing of the InP(001) substrate in an arsenic flux

Studies on incorporation of As2 and As4 in III–V compound semiconductors with two group V elements grown by molecular beam epitaxy

Thermally detected optical absorption, reflectance, and photoreflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy

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