Studies on incorporation of As2 and As4 in III–V compound semiconductors with two group V elements grown by molecular beam epitaxy

The incorporation behavior of arsenic and antimony in GaAsSb/GaAs grown by solid source molecular beam epitaxy

“…However, these models are not perfect to explain the experimental data [9,10]. Due to MBE growth is a non-equilibrium process where chemical potential change existed between gas and solid phases, so the nonequilibrium thermodynamic model is much more suitable to describe the SSMBE growth [9,10]. In the paper, we use the non-equilibrium thermodynamic model to explain the different incorporation behavior of group V elements.…”

“…N and N eq are the number of molecules or atoms in the incident flux and the corresponding equilibrium flux, respectively. a GaAs and a GaSb are the activities of GaAs and GaSb in GaAs y Sb 1Ày , and [9]:…”

“…[9], N i =N eq i ¼ F i =F eq i , where F i and F eq i are the incident flux of element i and the corresponding equilibrium flux, respectively, and combining Eqs. (2a), (2b), (3b) and (4), we get the relation of the composition and the BEP ratio between Sb 2 and As 2 :…”

“…This assumption gives a maximum incorporation coefficient of 0.5 for Sb 4 [12][13][14]. So we assume that one incident Sb 4 molecule produces one active Sb 2 molecule that will take part in incorporation [9]:…”

“…According to our assumption that one incident Sb 4 molecule produces one active Sb 2 molecule, one can easily find [9]:…”