Characteristics of strain compensated 1.3μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE

Zhang, Y.G; Chen, J.X; Chen, Y.Q; Qi, Meng; Li, A.Z; Fröjdh, Krister; Stoltz, B.

doi:10.1016/s0022-0248(01)00715-1

Cited by 19 publications

(10 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A potential application of SCMLHs is to construct strain-compensated distributed Bragg reflector (SC-DBR) by using long-period (l=4) SCMLHs. Strain compensation growth technique that decreases net strain in heterostructures by alternatively growing compressive-and tensile-strain layers, has been successfully employed in the growth of multiple quantum wells (MQWs) [7][8][9]. In the AlInP/InGaAsP SCMLHs, InGaAsP layer has compressive strain, while AlInP layer has tensile strain.…”

Section: Introductionmentioning

confidence: 99%

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Huang

Lao

et al. 2005

Journal of Crystal Growth

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Huang

Lao

et al. 2005

Journal of Crystal Growth

View full text Add to dashboard Cite

“…For this InP-based Sb-free In(Ga)As system, mature growth and processing technologies can be relied on, and a simple structure can be applied for the type-I QW lasers using interband emission, so the laser diodes with better performance could be expected. The QW lasers applying InP-lattice-matched InGaAsP as QW layers have been well developed with the aim of telecom lasers [23]. However, the lasing wavelength is shorter than 1.7 µm.…”

Section: Development Of Semiconductor Lasers In the 2-3 µM Bandmentioning

confidence: 99%

InP-Based Antimony-Free MQW Lasers in 2-3 μm Band

Yuan¹,

Zhang²

2015

Optoelectronics - Materials and Devices

View full text Add to dashboard Cite

Mid-infrared semiconductor lasers in the wavelength range of 2-3 µm have aroused increasing interests as they are highly desired for a wide range of applications ranging from medical diagnostics to environmental sensing. Access to this wavelength range was mainly achieved by antimony-containing compound semiconductor structures on GaSb substrates. Besides, InP-based In x Ga 1-x As (x>0.53) type-I multiple quantum well laser is a promising antimony-free approach in this band. The emission wavelength can be tailored to the 2-3 µm band by increasing the indium composition in the quantum wells. During the demonstration of this kind of lasers, controlling the strain and keeping fair structural quality is the main obstacle. In this chapter, the route for developing this kind of lasers is reviewed. The schemes of pseudomorphic and metamorphic structures are discussed for the 2-2.5 µm and 2.5-3 µm range, respectively. In the pseudomorphic scheme, triangular quantum wells grown by digital alloy technology are applied to restrict the strain and increase the lasing wavelength. Lasers at 2.43 µm were demonstrated under continuous wave operation at room temperature. To extend the emission wavelength longer, an InPbased metamorphic template with larger lattice constant was produced and InAs quantum wells were then grown. The lasing wavelength was further increased up to 2.71 µm. The details on the gas source molecular beam epitaxial growth, device processing as well as performance characterization are presented.

show abstract

“…Although the strained InAsP-InP material system, which is derived from the quaternary GaInAsP material system, may posses larger conduction band offset (∆E c = 0.65∆E g ) [1] but marked improvement in laser performance can not be achieved. The AlGaInAs-InP laser diodes in 1.3 µm wavelength have better high temperature characteristics, due to their large conduction band offset (∆E c = 0.72∆E g ).…”

Section: Introductionmentioning

confidence: 99%

Power gain improvement for single-electron transistors

Manh¹,

Honjo²

2014

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

In this study we investigate strain effect in barriers of 1.3 µm AlGaInAs-InP uncooled multiple quantum well lasers. Single effective mass and Kohn-Luttinger Hamiltonian equations have been solved to obtain quantum states and envelope wave functions in the structure. In the case of unstrained barriers, our simulations results have good agreement with a real device fabricated and presented in one of the references. Our main work is proposal of 0.2% compressive strain in the structure Barriers that causes significant reduction in Leakage current density and Auger current density characteristics in 85 • C. 20% improvement in mode gain-current density characteristic is also obtained in 85 • C.PACS numbers: 42.55.Px

show abstract

Characteristics of strain compensated 1.3μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE

Cited by 19 publications

References 25 publications

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

InP-Based Antimony-Free MQW Lasers in 2-3 μm Band

Power gain improvement for single-electron transistors

Contact Info

Product

Resources

About