GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Structural and Photoluminescence Properties for Highly Strain-Compensated InGaAs/InAlAs Superlattice

“…The primary differences for lattice imperfectness between our results and the results in Ref. [13] mainly stem from the larger lattice mismatches and higher strain of individual layers in our SL sample than the reference.…”

“…This may be attributed to the thick InGaAs and InAlAs layers and large period number of the SL sample, which induces the accumulated strain, and rough interfaces and composition fluctuation. [12,13] The broadening along the 𝜔/2𝜃 direction is larger than that along the 𝜔 direction for this sample, so the rough interfaces and composition fluctuations are the primary causes for lattice imperfectness, whereas the mismatched dislocation is the minor cause. Reference [13] reported that mismatched dislocation is the primary cause for lattice imperfectness in ten periods of AlInP/InGaAsP strain-compensated SL, where the lattice mismatches of AlInP and In-GaAsP are +0.65% and −0.39%, respectively.…”

“…[12,13] The broadening along the 𝜔/2𝜃 direction is larger than that along the 𝜔 direction for this sample, so the rough interfaces and composition fluctuations are the primary causes for lattice imperfectness, whereas the mismatched dislocation is the minor cause. Reference [13] reported that mismatched dislocation is the primary cause for lattice imperfectness in ten periods of AlInP/InGaAsP strain-compensated SL, where the lattice mismatches of AlInP and In-GaAsP are +0.65% and −0.39%, respectively. The primary differences for lattice imperfectness between our results and the results in Ref.…”

Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement

“…The thickness at which the indium segregation saturates in the literature is the order of 10 monolayers for InGaAs/ GaAs or InGaP/GaAs systems grown by CBE or MBE. 13,14,20) On the other hand, Huang et al reported that indium segregation does not saturate in 10 nm-thick InGaAsP layers on InP grown by gas source MBE (GS-MBE) at 510 C, 29) and Fukushima et al reported that indium segregates in the range of about 100 nm at surface of MOVPE-grown thick InGaP layer. 16) Our result is close to the latter two studies.…”

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

“…InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 SSQW were grown on InP (1 0 0) semiinsulating substrate by Thermal V90 gas-source molecule-beam epitaxy (GSMBE) [11]. A 50 nm InP buffer layer was grown on substrate first.…”