Power gain improvement for single-electron transistors

Abstract

In this study we investigate strain effect in barriers of 1.3 µm AlGaInAs-InP uncooled multiple quantum well lasers. Single effective mass and Kohn-Luttinger Hamiltonian equations have been solved to obtain quantum states and envelope wave functions in the structure. In the case of unstrained barriers, our simulations results have good agreement with a real device fabricated and presented in one of the references. Our main work is proposal of 0.2% compressive strain in the structure Barriers that causes significant reduction in Leakage current density and Auger current density characteristics in 85 • C. 20% improvement in mode gain-current density characteristic is also obtained in 85 • C.PACS numbers: 42.55.Px