This paper studies the effect of emitter width on the dc current gain, β F , and ac figures of merit, cut-off frequency, f T , and maximum oscillation frequency, f max , of realistic structures for 200 GHz SiGe heterojunction bipolar transistors (HBTs) using two-dimensional drift-diffusion (DD), hydrodynamic (HD) and energy balance (EB) simulations. The carrier transport models used are briefly presented. The SiGe-HBTs studied have a base thickness of 15 nm. Results of the three transport models are shown and analyzed, for the different emitter geometries.
A 2D model for Cu(In,Ga)Se 2 (CIGS) solar cells under low solar concentration is described and contrasted with experimental data. Using simulation, the effect of front electric contact design parameters: finger width, finger separation, and number of buses are analyzed for solar concentrations from 1 up to 10 suns. Efficiency maps allowing front contact grid optimization are shown and analyzed for each concentration value, assessing the viability of CIGS solar cells for low concentration applications.
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