Rear Contact Pattern Optimization based on 3D Simulations for IBC Solar Cells with Point-like Doped Contacts

Carrió, David; Ortega, Pablo; Martı́n, I.; López, Gabriel Montoro; López-González, J.M.; Orpella, A.; Voz, C.; Alcubilla, R.

doi:10.1016/j.egypro.2014.08.048

Cited by 11 publications

(4 citation statements)

References 8 publications

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“…Indeed, when efficiencies over 22% are targeted, the front surface recombination velocity needs to be below 30 cm s -1 (ref. 25). Figure 2a shows a minority carrier lifetimes of ∼1 ms in our b-Si samples, which corresponds to a surface recombination velocity S eff of ∼20 cm s -1 (Fig.…”

Section: Reflectance and Surface Recombinationmentioning

confidence: 99%

Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency

et al. 2015

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The nanostructuring of silicon surfaces—known as black silicon—is a promising approach to eliminate front-surface reflection in photovoltaic devices without the need for a conventional antireflection coating. This might lead to both an increase in efficiency and a reduction in the manufacturing costs of solar cells. However, all previous attempts to integrate black silicon into solar cells have resulted in cell efficiencies well below 20% due to the increased charge carrier recombination at the nanostructured surface. Here, we show that a conformal alumina film can solve the issue of surface recombination in black silicon solar cells by providing excellent chemical and electrical passivation. We demonstrate that efficiencies above 22% can be reached, even in thick interdigitated back-contacted cells, where carrier transport is very\ud sensitive to front surface passivation. This means that the surface recombination issue has truly been solved and black silicon solar cells have real potential for industrial production. Furthermore, we show that the use of black silicon can result in a 3% increase in daily energy production when compared with a reference cell with the same efficiency, due to its better angular acceptance.Peer ReviewedPostprint (author's final draft

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Section: Reflectance and Surface Recombinationmentioning

confidence: 99%

Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency

et al. 2015

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“…One can reduce recombination by reducing contact pitch. Contact pitch affects cell parameters and maintain tradeoff between recombination and resistive losses [45]. Moreover, widely spaced contacts are responsible for ohmic losses and degrade the efficiency of solar cells [46].…”

Section: Simulation Resultsmentioning

confidence: 99%

Simulation Results: Optimization of Contact Ratio for Interdigitated Back-Contact Solar Cells

Budhraja

Devayajanam

Basnyat

2017

International Journal of Photoenergy

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In the fabrication of interdigitated back contact (IBC) solar cells, it is very important to choose the right size of contact to achieve the maximum efficiency. Line contacts and point contacts are the two possibilities, which are being chosen for IBC structure. It is expected that the point contacts would give better results because of the reduced recombination rate. In this work, we are simulating the effect of contact size on the performance of IBC solar cells. Simulations were done in three dimension using Quokka, which numerically solves the charge carrier transport. Our simulation results show that around 10% of contact ratio is able to achieve optimum cell efficiency.

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“…Some advantages of this structure are evident, the absence of metal shadow losses and the facility to assemble solar cells in modules with coplanar connection. However, if one wants to exploit the full benefit of this structure, high minority-carrier bulk lifetime, outstanding front and rear surface passivation [5,6], and low front reflectance are mandatory.…”

Section: Introductionmentioning

confidence: 99%

High‐efficiency black silicon interdigitated back contacted solar cells on p‐type and n‐type c‐Si substrates

Ortega

Calle

Gastrow

et al. 2015

Progress in Photovoltaics

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This work demonstrates the high potential of Al 2 O 3 passivated black silicon in high-efficiency interdigitated back contacted (IBC) solar cells by reducing surface reflectance without jeopardizing surface passivation. Very low reflectance values, below 0.7% in the 300-1000 nm wavelength range, together with striking surface recombination velocities values of 17 and 5 cm/s on p-type and n-type crystalline silicon substrates, respectively, are reached. The simultaneous fulfillment of requirements, low reflectance and low surface recombination, paves the way for the fabrication of high-efficiency IBC Si solar cells using black silicon at their front surface. Outstanding photovoltaic efficiencies over 22% have been achieved both in p-type and n-type 9-cm 2 cells. 3D simulations suggest that efficiencies of up to 24% can be obtained in the future with minor modifications in the baseline fabrication process.

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Rear Contact Pattern Optimization based on 3D Simulations for IBC Solar Cells with Point-like Doped Contacts

Cited by 11 publications

References 8 publications

Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency

Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency

Simulation Results: Optimization of Contact Ratio for Interdigitated Back-Contact Solar Cells

High‐efficiency black silicon interdigitated back contacted solar cells on p‐type and n‐type c‐Si substrates

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