This work demonstrates the high potential of Al 2 O 3 passivated black silicon in high-efficiency interdigitated back contacted (IBC) solar cells by reducing surface reflectance without jeopardizing surface passivation. Very low reflectance values, below 0.7% in the 300-1000 nm wavelength range, together with striking surface recombination velocities values of 17 and 5 cm/s on p-type and n-type crystalline silicon substrates, respectively, are reached. The simultaneous fulfillment of requirements, low reflectance and low surface recombination, paves the way for the fabrication of high-efficiency IBC Si solar cells using black silicon at their front surface. Outstanding photovoltaic efficiencies over 22% have been achieved both in p-type and n-type 9-cm 2 cells. 3D simulations suggest that efficiencies of up to 24% can be obtained in the future with minor modifications in the baseline fabrication process.
In this work, a photovoltaic mini‐module combining interdigitated back‐contacted solar cells with black silicon in the front was implemented as a proof of concept. The module consists of nine solar cells connected in series with an active area of 86.5 cm2. Both the assembly and panel encapsulation were made using industrial back‐contact module technology. Noticeable photovoltaic efficiencies of 18.1% and 19.9% of the whole module and the best individual cell of the module, respectively, demonstrate that fragile nanostructures can withstand standard module fabrication stages. Open‐circuit voltage and fill factor values of 5.76 V and 81.6%, respectively, reveal that series interconnection between cells works as expected, confirming a good ohmic contact between cell busbars and the conductive backsheet. Additionally, the excellent quasi‐omnidirectional antireflection properties of black silicon surfaces prevail at module level, as it is corroborated by light incidence angle dependence measurements of the short‐circuit current parameter.
In this work we show a baseline fabrication process of interdigitated back contacted IBC c-Si(p) solar cells, which combines conventional diffusion oven stages to define base p+ and emitter n+/n++ regions at the back side, with outstanding front surface passivation using atomic layer deposited Al2O3 films over random pyramids surfaces. Cells include a selective phosphorous n++ emitter in order to improve contact resistance and simultaneously reduce recombination current density. Fabricated devices reach efficiencies up to 22.2% (AM1.5G 1 kW/m2, T=25°C). This value is so far the highest efficiency reported by any Spanish institution using silicon substrates. 3D simulations envisage efficiencies beyond 24% introducing little changes in the fabrication process.Peer ReviewedPostprint (published version
In this work we describe a baseline fabrication process of interdigitated-back-contact IBC c-Si(p) solar cells, which combines conventional diffusion oven stages to define base p+ and emitter n+ regions at the back side, with outstanding front surface passivation using atomic layer deposited Al 2 O 3 films. Best fabricated device reaches efficiency up to 20.3% (AM1.5G 1 kW/m 2 , T=25ºC), with a short circuit density J sc , open circuit voltage V oc and fill factor FF of 40.6 mA/cm 2 , 648 mV and 77.2% respectively.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.