High‐efficiency black silicon interdigitated back contacted solar cells on p‐type and n‐type c‐Si substrates

Ortega, Pablo; Calle, Eric; Gastrow, Guillaume von; Repo, Päivikki; Carrió, David; Savin, Hele; Alcubilla, R.

doi:10.1002/pip.2664

Cited by 36 publications

(27 citation statements)

References 25 publications

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“…However, for comparison purposes, we have included in the graph two additional measurements using single b-Si IBC cells: a measurement from a nonencapsulated cell considering data from Savin et al 14 and a single-cell module, which was encapsulated in the same way as the mini-module but using in this case antireflection-coated PV-quality glass. In this latter case, b-Si IBC cells were fabricated in a previous work, 15 exhibiting efficiencies up to 22% before encapsulation.…”

Section: Photovoltaic Performance At Different Light Incidence Anglesmentioning

confidence: 99%

“…Solar cells were fabricated following a similar fabrication process as is reported in Ortega et al but using in this case strip‐like regions for both contact windows and base and emitter doped regions, and an emitter coverage ( f e ) of 80%, ie, the ratio between emitter strip area and total cell area. This f e value is chosen in order to maximize PV efficiency as a trade‐off between high photocarrier collection, ie, low electrical shadowing, and low lateral base resistance losses as can be seen in Figure S1B included in the Supporting Information section.…”

Section: Ibc Solar Cellsmentioning

confidence: 99%

“…With this idea in mind, record efficiencies (22.1%) have been reported using an interdigitated back-contacted (IBC) solar cell architecture (9 cm 2 ) on p-and n-type c-Si substrates. 14,15 In this approach, a nondoped b-Si in the front surface was passivated using very conformal annealed Al 2 O 3 layers deposited by the atomic layer deposition (ALD) technique reaching surface recombination velocities below approximately 10 cm/s independently of the substrate polarity. 16 These results, using either a both-side or a back-contacted cell architecture, pave the way for introducing b-Si to obtain high efficiency and cost-effective devices.…”

Section: 13mentioning

confidence: 99%

“…An additional advantage of this type of solar cell concept is the facility to assemble solar cells in modules provided a coplanar connection. With this idea in mind, record efficiencies (22.1%) have been reported using an interdigitated back‐contacted (IBC) solar cell architecture (9 cm 2 ) on p ‐ and n ‐type c‐Si substrates . In this approach, a nondoped b‐Si in the front surface was passivated using very conformal annealed Al 2 O 3 layers deposited by the atomic layer deposition (ALD) technique reaching surface recombination velocities below approximately 10 cm/s independently of the substrate polarity …”

Section: Introductionmentioning

confidence: 99%

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Black silicon back‐contact module with wide light acceptance angle

Ortega

Garín

Gastrow

et al. 2019

Progress in Photovoltaics

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In this work, a photovoltaic mini‐module combining interdigitated back‐contacted solar cells with black silicon in the front was implemented as a proof of concept. The module consists of nine solar cells connected in series with an active area of 86.5 cm2. Both the assembly and panel encapsulation were made using industrial back‐contact module technology. Noticeable photovoltaic efficiencies of 18.1% and 19.9% of the whole module and the best individual cell of the module, respectively, demonstrate that fragile nanostructures can withstand standard module fabrication stages. Open‐circuit voltage and fill factor values of 5.76 V and 81.6%, respectively, reveal that series interconnection between cells works as expected, confirming a good ohmic contact between cell busbars and the conductive backsheet. Additionally, the excellent quasi‐omnidirectional antireflection properties of black silicon surfaces prevail at module level, as it is corroborated by light incidence angle dependence measurements of the short‐circuit current parameter.

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Section: Photovoltaic Performance At Different Light Incidence Anglesmentioning

confidence: 99%

Section: Ibc Solar Cellsmentioning

confidence: 99%

Section: 13mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Black silicon back‐contact module with wide light acceptance angle

Ortega

Garín

Gastrow

et al. 2019

Progress in Photovoltaics

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“…Accordingly, it is expected that back contact concepts will gain market share by 2025 . However, a relatively long minority‐carrier diffusion length, a good passivation quality at interfaces, and a low front reflectance are typically required to fully exploit the benefits of the IBC design .…”

Section: Introductionmentioning

confidence: 99%

Opto-electrical modelling and optimization study of a novel IBC c-Si solar cell

Procel

Ingenito

Rose

et al. 2017

Prog. Photovolt: Res. Appl.

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Interdigitated back contact (IBC) crystalline silicon (c-Si) solar cells are attracting a lot of attention because of their capability to reach world record conversion efficiency. Because of the relatively complex contact pattern, their design and optimization typically require advanced numerical simulation tools. In this work, a TCAD-based simulation platform has been developed to account accurately and in detail the optical and passivation mechanisms of front texturization. Its validation has been carried out with respect to a novel homo-junction IBC c-Si solar cell based on ion implantation and epitaxial growth, comparing measured and simulated reflectance, transmittance, internal quantum efficiency, external quantum efficiency spectra, and current density-voltage characteristics. As a result of the calibration process, the opto-electrical losses of the investigated device have been identified quantitatively and qualitatively. Then, an optimization study about the optimal front surface field (FSF) doping, front-side texturing morphology, and rear side geometry has been performed. The proposed simulation platform can be potentially deployed to model other solar cell architectures than homo-junction IBC devices (e.g., passivated emitter rear cell, passivated emitter rear locally diffused cell, hetero-IBC cell). Simulation results show that a not-smoothed pyramid-textured front interface and an optimal FSF doping are mandatory to minimize both the optical and the recombination losses in the considered IBC cell and, consequently, to maximize the conversion efficiency. Similarly, it has been showed that recombination losses are affected more by the doping profile rather than the surface smoothing. Moreover, the performed investigation reveals that the optimal FSF doping is almost independent from the front texturing morphology and FSF passivation quality. According to this result, it has been demonstrated that an IBC cell featuring an optimal FSF doping does not exhibit a significant efficiency improvement when the FSF passivation quality strongly improves, proving that IBC cell designs based on low-doped FSF require a very outstanding passivation quality to be competitive. Deploying an optimization algorithm, the adoption of an optimized rear side geometry can potentially lead to an efficiency improvement of about 1% abs as compared with the reference IBC solar cell. Further, by improving both emitter and c-Si bulk quality, a 22.84% efficient solar cell for 280-μm thick c-Si bulk was simulated.

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Silicon Surface Structuring

2022

Silicon

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High‐efficiency black silicon interdigitated back contacted solar cells on p‐type and n‐type c‐Si substrates

Cited by 36 publications

References 25 publications

Black silicon back‐contact module with wide light acceptance angle

Black silicon back‐contact module with wide light acceptance angle

Opto-electrical modelling and optimization study of a novel IBC c-Si solar cell

Silicon Surface Structuring

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