The nanostructuring of silicon surfaces—known as black silicon—is a promising approach to eliminate front-surface reflection in photovoltaic devices without the need for a conventional antireflection coating. This might lead to both an increase in efficiency and a reduction in the manufacturing costs of solar cells. However, all previous attempts to integrate black silicon into solar cells have resulted in cell efficiencies well below 20% due to the increased charge carrier recombination at the nanostructured surface. Here, we show that a conformal alumina film can solve the issue of surface recombination in black silicon solar cells by providing excellent chemical and electrical passivation. We demonstrate that efficiencies above 22% can be reached, even in thick interdigitated back-contacted cells, where carrier transport is very\ud sensitive to front surface passivation. This means that the surface recombination issue has truly been solved and black silicon solar cells have real potential for industrial production. Furthermore, we show that the use of black silicon can result in a 3% increase in daily energy production when compared with a reference cell with the same efficiency, due to its better angular acceptance.Peer ReviewedPostprint (author's final draft

Silicon is the material of choice for visible light photodetection and solar cell fabrication. However, due to the intrinsic band gap properties of silicon, most infrared photons are energetically useless. Here, we show the first example of a photodiode developed on a micrometre scale sphere made of polycrystalline silicon whose photocurrent shows the Mie modes of a classical spherical resonator. The long dwell time of resonating photons enhances the photocurrent response, extending it into the infrared region well beyond the absorption edge of bulk silicon. It opens the door for developing solar cells and photodetectors that may harvest infrared light more efficiently than silicon photovoltaic devices that are so far developed.

At present ultraviolet sensors are utilized in numerous fields ranging from various spectroscopy applications via biotechnical innovations to industrial process control. Despite of this, the performance of current UV sensors is surprisingly poor. Here, we break the theoretical Shockley-Queisser limit and demonstrate a device with a certified external quantum efficiency (EQE) above 130% in UV range without external amplification. The record high performance is obtained using a nanostructured silicon photodiode with self-induced junction. We show that the high efficiency is based on effective utilization of multiple carrier generation by impact ionization taking place in the nanostructures. While the results can readily have a significant impact on the UV-sensor industry, the underlying technological concept can be applied to other semiconductor materials, thereby extending above unity response to longer wavelengths.

The thermal emission of cross-slit silicon carbide grating is studied in the Restrahlen region over all emission angles. We show experimentally that the thermal excitation of surface-phonon polaritons on the surface of 2D grating allows us to get a high emissivity in both polarizations, which is collimated in p polarization for a specific wavelength determined by the periodicity of the grating. We also show numerically that 2D gratings optimized to efficiently out-couple thermally excited surface-phonon polaritons of the flat part of the dispersion relation can have a high efficiency for all emission directions for both polarizations.

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Astronomical Roentgen Telescope – X-ray Concentrator (ART-XC) is the hard X-ray instrument with grazing incidence imaging optics on board the Spektr-Roentgen-Gamma (SRG) observatory. The SRG observatory is the flagship astrophysical mission of the Russian Federal Space Program, which was successively launched into orbit around the second Lagrangian point (L2) of the Earth-Sun system with a Proton rocket from the Baikonur cosmodrome on 13 July 2019. The ART-XC telescope will provide the first ever true imaging all-sky survey performed with grazing incidence optics in the 4–30 keV energy band and will obtain the deepest and sharpest map of the sky in the energy range of 4–12 keV. Observations performed during the early calibration and performance verification phase as well as during the ongoing all-sky survey that started on 12 December 2019 have demonstrated that the in-flight characteristics of the ART-XC telescope are very close to expectations based on the results of ground calibrations. Upon completion of its four-year all-sky survey, ART-XC is expected to detect approximately 5000 sources (~3000 active galactic nuclei, including heavily obscured ones, several hundred clusters of galaxies, ~1000 cataclysmic variables and other Galactic sources), and to provide a high-quality map of the Galactic background emission in the 4–12 keV energy band. ART-XC is also well suited for discovering transient X-ray sources. In this paper, we describe the telescope, the results of its ground calibrations, the major aspects of the mission, the in-flight performance of ART-XC, and the first scientific results.

Selective thermal emitters concentrate most of their spontaneous emission in a spectral band much narrower than a blackbody. When used in a thermophovoltaic energy conversion system, they become key elements defining both its overall system efficiency and output power. Selective emitters' radiation spectra must be designed to match their accompanying photocell's band gap and, simultaneously, withstand high temperatures (above 1000 K) for long operation times. The advent of nanophotonics has allowed the engineering of very selective emitters and absorbers; however, thermal stability remains a challenge since 1 of 22 nanostructures become unstable at temperatures much below the melting point of the used materials. In this paper we explore an hybrid 3D dielectric-metallic structure that combines the higher thermal stability of a monocrystalline 3D Silicon scaffold with the optical properties of a thin Platinum film conformally deposited on top. We show experimentally that these structures exhibit a selective emission spectrum suitable for TPV applications and that they are thermally stable at temperatures up to 1100 K. These structures are ideal in combination with III-V semiconductors in the range Eg=0.4-0.55 eV such as InGaAsSb (Eg=0.5-0.6 eV) and InAsSbP (Eg=0.3-0.55 eV).

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