The importance of bandgap narrowing distribution between the conduction and valence bands in abrupt HBTs

López-González, J.M.; Prat, L.

doi:10.1109/16.595930

Cited by 36 publications

(21 citation statements)

References 26 publications

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“…Its doping profile is presented in Table III, and the material attributes used in the simulation are in Table IV (it should be noted that there is still some uncertainty in some of these material properties since they are not well known yet). Distributed band gap narrowing is taken into account in the emitter and base regions according to Reference [9]. In this case, there are also abrupt discontinuities in the E C level at both heterojunctions but none of them form a spike-like potential barrier for the electrons crossing the device (see the band diagram in Reference [11]).…”

Section: Resultsmentioning

confidence: 99%

“…Table II shows the material properties used in the simulation. Distributed band gap narrowing is taken into account in the emitter and base regions from Reference [9].…”

Section: Resultsmentioning

confidence: 99%

“…Since currents through a heterojunction interface depend on the discontinuities of these bands, they are also affected by band gap narrowing and the variations in the electronic affinity [9].…”

Section: Band Structure For Abrupt Dhbtmentioning

confidence: 99%

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A model for abrupt double heterojunction bipolar transistors

García‐Loureiro

López-González

2004

Int J Numerical Modelling

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SUMMARYIn this paper, we present a model for double heterojunction bipolar transistors (DHBTs) that takes into account Fermi-Dirac statistics as well as an arbitrary injection level. The most commonly used models in the literature for heterojunction bipolar transistors (HBTs), bipolar junction transistors (BJTs) and PN junctions can be easily obtained as a particular case of the general model presented here. In order to illustrate its features, the model is applied to an InP/GaAsSb/InP DHBT and an InP/InGaAs HBT.

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Section: Resultsmentioning

confidence: 99%

“…Table II shows the material properties used in the simulation. Distributed band gap narrowing is taken into account in the emitter and base regions from Reference [9].…”

Section: Resultsmentioning

confidence: 99%

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A model for abrupt double heterojunction bipolar transistors

García‐Loureiro

López-González

2004

Int J Numerical Modelling

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“…From the aforementioned equations it is easy to obtain expression (6) for the electron concentration and, using a similar procedure, Equation (7) for the hole concentration [6]:…”

Section: Physical Modelmentioning

confidence: 99%

“…The formulation given by (6) and (7) for carrier concentrations is simple and compact. Parameters n ien and n iep may include different phenomena that affect the concentrations at high doping levels: influence of Fermi-Dirac statistics, changes in the energy levels and variations in the effective densities of states.…”

Section: Physical Modelmentioning

confidence: 99%

A parallel 3D semiconductor device simulator for gradual heterojunction bipolar transistors

García‐Loureiro

López-González

Pena

2003

Int J Numerical Modelling

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SUMMARYIn this paper, we present a parallel three-dimensional semiconductor device simulator for gradual heterojunction bipolar transistor. This simulator uses the drift-diffusion transport model. The Poisson equation and continuity equations were discretized using a finite element method (FEM) on an unstructured tetrahedral mesh. Fermi-Dirac statistics is considered in our model and a compact formulation is used that makes it easy to take into account other effects such as the non-parabolic nature of the bands or the presence of various subbands in the conduction process. Domain decomposition methods were tested to solve the linear systems. We have applied this simulator to a gradual heterojunction bipolar transistor (HBT), and we present some measures of the parallel execution time for several solvers and some electrical results. This code has been implemented for distributed memory multicomputers, making use of the MPI message passing standard library and a parallel solver library.

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