1998
DOI: 10.1002/(sici)1099-1204(199807/08)11:4<221::aid-jnm303>3.0.co;2-v
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Numerical analysis of abrupt heterojunction bipolar transistors

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Cited by 7 publications
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“…Most of the matrices belong to the Williams collection, 30 except matrices M3, M4, and M5 that arise from a 3D FEM code used to study semiconductor devices. [31][32][33] Table 2 shows the memory footprint required by each format and the optimal value of WIPR for the ELLR-T format. The parameter BLS, required by the K1 format, was fixed to 16, because it is the optimal value for this format when using it on the Intel Xeon Phi architecture according to the work of Kreutzer et al 18 ; the parameter HBRS was fixed to 8 as mentioned in Section 5.…”
Section: Storage and Optimal Valuesmentioning
confidence: 99%
“…Most of the matrices belong to the Williams collection, 30 except matrices M3, M4, and M5 that arise from a 3D FEM code used to study semiconductor devices. [31][32][33] Table 2 shows the memory footprint required by each format and the optimal value of WIPR for the ELLR-T format. The parameter BLS, required by the K1 format, was fixed to 16, because it is the optimal value for this format when using it on the Intel Xeon Phi architecture according to the work of Kreutzer et al 18 ; the parameter HBRS was fixed to 8 as mentioned in Section 5.…”
Section: Storage and Optimal Valuesmentioning
confidence: 99%