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The time development of a photorefractive grating created by intersecting 30 ps (532 nm) beams in a well-characterized Bi12SiO20 crystal (in a static field around 1 kV/cm) unambiguously reveals the mobility of photoexcited electrons to be 0.24±0.07 cm2/V s through what is essentially a ‘‘time-of-flight’’ measurement.

Photorefractive gratings are induced with picosecond light pulses in a BSO crystal. Both experiment and calculations show a buildup of the effect governed by a diffusion of the excited charge carriers that occurs after illumination.

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