3 m photorefractive materials in energy transfer experiments

Fabre, Jean Claude; Jonathan, J.M.C.; Roosen, Gérald

doi:10.1016/0030-4018(88)90162-9

Cited by 28 publications

(13 citation statements)

References 8 publications

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“…θ is the half angle between the beams inside the crystal. The linear refractive index of the material is n 0 , r eff is the effective electrooptic coefficient that depends on the crystal and the beam polarization orientations [5] and ε is the dielectric constant. All these parameters are known from the literature.…”

Section: Experimental Studymentioning

confidence: 99%

Wavelength dependent effective trap density in CdTe: evidence for the presence of two photorefractive species

Delaye

Montmorillon

Biaggio

et al. 1997

Optics Communications

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Section: Experimental Studymentioning

confidence: 99%

Wavelength dependent effective trap density in CdTe: evidence for the presence of two photorefractive species

Delaye

Montmorillon

Biaggio

et al. 1997

Optics Communications

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“…verify that the gain saturates with respect to the incident irradiation. We also eliminate the absorption grating components which are present in highly irradiated samples by using properties of symmetry of the PR effect [27]. Γ changes its sign when turning round the crystal of 180° around the [110] direction, whereas absorption components stay identical which allows the extraction of the photorefractive component for all the measurements as presented in Table 5.…”

Section: A Set-up and Experimental Resultsmentioning

confidence: 99%

Photorefractive measurements on electron-irradiated semi-insulating GaAs

Delaye

Bardeleben²,

Roosen

1994

Appl. Phys. A

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We present photorefractive measurements at 1.06µm and 1.3µm performed in electron irradiated GaAs. Irradiation with electrons of kinetic energies ≥ 1MeV introduces intrinsic electrically active defects, which modify the Fermi level position and allow to modify the electron hole competition mechanism of the photorefractive effect. Further, it has been shown that the optical absorption in the 1.3 to 1.5 µm spectral range can be increased, which might allow to enlarge the useful spectral range of GaAs towards optical telecommunication windows. The native and irradiation induced defects have been assessed by electron paramagnetic resonance and optical absorption spectroscopy conducted at T=300K and 77K. The direct influence of an irradiation induced mid-gap defect on the photorefractive effect is experimentally and theoretically demonstrated .

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“…The dozen of samples cut from three ingots are tested showing rather reproducible behaviour; the detailed study presented in what follows has been performed with the sample grown from the melt containing 2.5 Â 10 19 cm À3 of tin. A standard two-beam coupling geometry is used with two recording beams polarized normally to the plane of incidence and grating vector aligned along ½001 (beam-coupling geometry for cubic photorefractive crystals [11]). The output power of the laser is up to 500 mW and the half-width of the Gaussian beams is about 3.5 mm on the sample input face.…”

Section: Experiments With Cw Radiationmentioning

confidence: 99%