Magnetic properties of Ni nanowire arrays, prepared by oblique evaporation of Ni onto V-groove InP substrates, were investigated between 5 and 300 K using magnetoresistance and SQUID magnetization measurements. The results show that as-prepared wires, which range from 70–130 nm in width, have an easy axis of magnetization parallel to the wire axis at room temperature, but transverse to the wire axis at low temperature. The crossover of the easy axis direction from transverse to parallel as a function of temperature is more pronounced for the narrower wires. We interpret our results in terms of a competition between a temperature-dependent magnetic anisotropy (K⊥), which tends to align the magnetization transverse to the wire axis, and the shape anisotropy of the wires which tends to orient it along the wire axis. Several mechanisms are proposed (e.g., oblique evaporation, stress, and surface oxidation) from which K⊥ could originate. Based upon the stress values deduced from K⊥, and the thermal expansion mismatch between Ni and InP, the stress mechanism appears to dominate.
Low-temperature electrical transport measurements were performed on large arrays of 150-nm-wide superconducting vanadium ͑V͒ wires covered with either a thin layer of Au ͑V/Au͒ or Fe ͑V/Fe͒. The measurements were conducted using various electrical contact geometries. Our results show that a particular arrangement of the electrical contacts in combination with the superconducting proximity effect can result in a pronounced ''negative resistance'' anomaly below the resistive transition. We demonstrate that this ''negative resistance'' can be clearly reproduced by constructing resistor circuits based upon the particular contact arrangement.
Large arrays of parallel metallic nanowires ranging from 20 - 120 nm in width are fabricated using a general and relatively simple technique. Holographic laser interference exposure of photoresist and anisotropic etching are used to pattern the surface of InP(001) substrates into V-shaped grooves of 200 nm period. Subsequently metal is evaporated at an angle onto the V-grooved substrates, naturally resulting in thousands of ultra-narrow metallic wires in parallel. Resistance measurements proof that as-prepared wires are electrically continuous.
Large arrays of Au nanowires down to 50 nm in width are fabricated on V-grooved InP substrates. Holographic laser interference exposure of photoresist and anisotropic etching are used to pattern the surface of InP(001) substrates into V-shaped grooves with a 200 nm period. Next, the patterned substrates are covered with a thin Au film, which is subsequently structured into nanowires using a well controlled wet etching process. Initial characterization confirms that the wires are electrically continuous.
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