General technique for fabricating large arrays of nanowires

Abstract

Large arrays of parallel metallic nanowires ranging from 20 - 120 nm in width are fabricated using a general and relatively simple technique. Holographic laser interference exposure of photoresist and anisotropic etching are used to pattern the surface of InP(001) substrates into V-shaped grooves of 200 nm period. Subsequently metal is evaporated at an angle onto the V-grooved substrates, naturally resulting in thousands of ultra-narrow metallic wires in parallel. Resistance measurements proof that as-prepared wires are electrically continuous.

Fabrication of metal nanowires by atomic force microscopy nanoscratching and lift-off process

“…In total, nanowires of five different metals with widths as small as 50 nm have been fabricated. The dimensions and the electrical resistivities of representative results are summarized in table 1, 3 along with comparative resistivities reported in literature [1,[22][23][24][25][26][27][28], 4 . (Note that the listed reported results are from nanowires with widths and thicknesses of less than 100 nm.)…”

Anomalous negative resistance in superconducting vanadium nanowires

“…Our V/Au and V/Fe wires were prepared by oblique electron-beam evaporation onto V-groove-patterned InP substrates with a period of 240 nm. 18 The V, Au, and Fe were evaporated at a rate of 0.2 and 0.1 nm/s, respectively, in a vacuum system with a base pressure of ϳ10 Ϫ8 mbar. All targets were casted in an arc furnace from 99.99% pure bulk material.…”

Genetic and OtherDNA‐Based Biosensor Applications

“…This effect has been exploited for the realization of arrays of nanowires. 76 Elaborating further on this principle, an appropriate design of a three-dimensional microstructure in a substrate could result in a self-contained shadowing effect that enables the creation of electrically disconnected interdigitated electrodes (IDEs). Such a three-dimensional design is shown in Figure 3.…”