Fabrication of metal nanowires by atomic force microscopy nanoscratching and lift-off process

Chen, Yu‐Ju; Hsu, J.Y.; Lin, Heh‐Nan

doi:10.1088/0957-4484/16/8/020

Cited by 105 publications

(83 citation statements)

References 27 publications

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“…Large experimental investigations on Ti nanostructures have been done [8][9][10][11][12][13][14][15][16][17][18][19]. Nakamura et al fabricated titanium nanowires in sapphire by utilizing lattice dislocations which exhibited excellent electrical conductivity [8].…”

Section: Introductionmentioning

confidence: 99%

A DFT Study of the Strain Effect on the Optical Properties of Linear and Dimerized Titanium Nanochains

Sohrabikia

Jafari

2016

Acta Phys. Pol. A

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Optical properties of both linear and dimerized nanochains of titanium at different atomic distances are calculated using the full potential linearized augmented plane wave plus local orbital method, and using the generalized gradient approximation. When Ti nanochains were compressed, the position of critical points such as static dielectric constants and the main peaks in optical spectra shifted with an increased or decreased energy comparative to that at equilibrium constants. Under tensile strain ε1 max(ω) decreases in linear and dimerized structures. The plasma frequency for both structures decreases as the bond length increases. Moreover, the peaks of the energy loss function move toward higher energies with increasing bond length for linear structure, while they do not change significantly for the dimerized structure. The absorption for both nanostructures decreases by increasing the bond lengths.

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Section: Introductionmentioning

confidence: 99%

A DFT Study of the Strain Effect on the Optical Properties of Linear and Dimerized Titanium Nanochains

Sohrabikia

Jafari

2016

Acta Phys. Pol. A

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“…14,15 If the indentation is made on a single polymer layer, the tip applies vertical force directly to the substrate. [16][17][18] Although this single-layer indentation method could make nanostructures, the AFM tip could be easily damaged because the tip applies the force to the hard substrate directly while making indentations. The ploughing method, which also uses an AFM, is another way to simply fabricate nanowires, but the AFM tip can be easily damaged because of the lateral force applied to it.…”

Section: Introductionmentioning

confidence: 99%

Reproducible nanostructure fabrication using atomic force microscopy indentation with minimal tip damage

Jeon¹,

Ryu²,

Jhe³

et al. 2014

Journal of Vacuum Science & Technology B, Nanotechnology an

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A uniform pattern of quantum dots and nanowires were reproducibly fabricated by creating holes in a two-layer structure using atomic force microscopy (AFM) indentation, dry-etching of polymer resists, and metal deposition through the indentation holes. The two-layer structure was created by depositing a thin gold layer onto a polymethyl methacrylate (PMMA) layer on a silicon substrate. The indentation depth was set so that the AFM tip penetrated the thin gold layer without the tip contacting the silicon substrate. This two-layer indentation was used to create a pattern of holes in the thin gold layer. Then, the PMMA was exposed to an isotropic O 2 plasma etchant through the holes in the indentation pattern to form an undercut between the substrate and the gold layer. Quantum dots were subsequently created through the deposition of gold on the exposed silicon substrate through the indentation holes. Gold nanowires were also fabricated by creating indentation holes consecutively and optimizing the distance between the holes using the same two-layer indentation method. The topographic and electrical measurements of the fabricated gold nanowires suggest that our method is capable of making uniform and reproducible nanowires. The scanning electron microscopy images of the tips confirmed that the consecutive-hole-indentation method is less invasive than the conventional ploughing method, where constant tip contact occurs with the substrate during the formation of nanowires.

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“…Subsequent exposure of the semiconductor surface to an Au(III) solution results in the deposition of gold by galvanic displacement reaction on pre-patterned defect areas. [16][17][18][19][20] have been demonstrated as useful approaches in the fabrication of metal structures on various surfaces.The metallization of semiconductor surfaces via the galvanic displacement reaction has been intensively investigated.2,21-23 Galvanic displacement deposition is a relatively simple redox reaction in which noble metal ions in solutions are reduced by the substrate resulting in growth of metal deposits with various surface morphologies. The surface morphology of electroless deposited metals depends on the substrate, composition of the electrolyte, including pH and conditions of deposition eg.…”

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confidence: 99%

“…Use of polymer masks to restrict reduction of gold on a specific area has been applied in most of static/dynamic plow-based lithography techniques. [16][17][18][19] In this work a simple three step process for a deposition of 50 nm wide and 10 nm high gold nanowires on GaAs semiconductor is described. This technique may allow the direct deposition of noble metals such as Au, Ag, or similar on GaAs semiconductor surface.…”

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confidence: 99%

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Galvanic Deposition of Gold on GaAs: A Tip-Induced Lithography Approach

Gaikwad

Djokić

Thundat

2015

J. Electrochem. Soc.

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A lithography technique based on reduction of metal ions on localized regions of GaAs surfaces is demonstrated. In this technique, an atomic force microscopy (AFM) tip was used to create localized defect patterns on a GaAs surface while operated in air. Subsequent exposure of the semiconductor surface to an Au(III) solution results in the deposition of gold by galvanic displacement reaction on pre-patterned defect areas. [16][17][18][19][20] have been demonstrated as useful approaches in the fabrication of metal structures on various surfaces.The metallization of semiconductor surfaces via the galvanic displacement reaction has been intensively investigated.2,21-23 Galvanic displacement deposition is a relatively simple redox reaction in which noble metal ions in solutions are reduced by the substrate resulting in growth of metal deposits with various surface morphologies. The surface morphology of electroless deposited metals depends on the substrate, composition of the electrolyte, including pH and conditions of deposition eg. temperature, stirring etc.. 24,25 Metallization of semiconductors via galvanic displacement leads to the deposition of metal over the entire surface. Therefore, masking of the surface of semiconductors with specific polymers is required in order to fabricate desired metallic patterns. Use of polymer masks to restrict reduction of gold on a specific area has been applied in most of static/dynamic plow-based lithography techniques. [16][17][18][19] In this work a simple three step process for a deposition of 50 nm wide and 10 nm high gold nanowires on GaAs semiconductor is described. This technique may allow the direct deposition of noble metals such as Au, Ag, or similar on GaAs semiconductor surface. ExperimentalCommercially available n-type GaAs (100) semiconductor wafers (Wafer world Inc, Florida) cut into 1 cm 2 pieces were used as substrates in the present experiments. In order to confirm the deposition of gold onto GaAs via the galvanic displacement reaction, the substrates were cleaned with ethanol and then simply immersed into 5 mM gold chloride trihydrate (HAuCl 4 · 3H 2 O) solution for one hour. All experiments were performed at room temperature (about 22• C). After one hour of immersion, GaAs wafers were removed from the Au-containing solution, carefully washed with distilled water and then with ethanol. The substrates were stored under ethanol for the future scanning electron microscopy (SEM) and X-ray diffraction (XRD) examinations.For the tip-induced lithography on GaAs semiconductor, the following experiments were performed. The substrates were first cleaned * Electrochemical Society Active Member.* * Electrochemical Society Fellow. z E-mail: sdjokic@telus.net with deionized water and sonicated in 95% ethanol solution for 2 minutes to remove the contaminations. The substrates were then dried by blowing N 2 gas and subjected to the three step lithography process. 0.01% Br 2 dissolved in CH 3 OH (BrMeOH) solution was used to clean the GaAs substrate prior to gold deposition....

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Fabrication of metal nanowires by atomic force microscopy nanoscratching and lift-off process

Cited by 105 publications

References 27 publications

A DFT Study of the Strain Effect on the Optical Properties of Linear and Dimerized Titanium Nanochains

A DFT Study of the Strain Effect on the Optical Properties of Linear and Dimerized Titanium Nanochains

Reproducible nanostructure fabrication using atomic force microscopy indentation with minimal tip damage

Galvanic Deposition of Gold on GaAs: A Tip-Induced Lithography Approach

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