Neutron activation techniques were used to study the efficiency of ion‐implantation gettering of gold in gold‐equilibrated silicon samples. The implantation species was 150 keV argon ions. An ion dose of
1×1016 normalAr/cm2
was found to be optimum. Within the range of ion current density investigated, the gettering efficiency increased with the ion current density. Implantation performed at a high temperature provided less gettering than that performed at a lower temperature. A postannealing temperature of either 900° or 1000°C could be superior to 1100°C in gettering gold, provided enough gettering time was allowed. The optimum conditions for ion‐implantation gettering were applied to a typical MOS processing cycle on as‐recieved silicon samples. For an ion dose of
1×1016 normalAr/cm2
, a total gettering time of 8 hr at 1000°C increased the MOS generation lifetime significantly compared with that for a control sample. The data from the MOS generation lifetime study are consistent with the results of the neutron activation analysis.
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