1951
DOI: 10.1063/1.1700032
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Effect of Auxiliary Current on Transistor Operation

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“…where q is the charge on a carrier and D , is the hole diffusion coefficient, given by the Einstein relation The flow of electrons and holes in semiconductors has been investigated in detail by Van Roosbroeck (1950) andPrim (1951), who have analysed the flow fields which are set up.…”
Section: Minority Carriersmentioning
confidence: 99%
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“…where q is the charge on a carrier and D , is the hole diffusion coefficient, given by the Einstein relation The flow of electrons and holes in semiconductors has been investigated in detail by Van Roosbroeck (1950) andPrim (1951), who have analysed the flow fields which are set up.…”
Section: Minority Carriersmentioning
confidence: 99%
“…Similar effects can be obtained in an arrangement, sometimes called the transistor tetrode (fig. 20 (I)), where an auxiliary current passes through a non-rectifying contact near the collector, increasing the magnitude of the flow field and making it more uniform (Reich et al 1951). These effects show, incidentally, that the primary cause of the reduction in I , at high frequencies is field spreading, and not diffusion.…”
Section: Yandmentioning
confidence: 99%