Implantation Gettering of Gold in Silicon

Abstract

Neutron activation techniques were used to study the efficiency of ion‐implantation gettering of gold in gold‐equilibrated silicon samples. The implantation species was 150 keV argon ions. An ion dose of 1×1016 normalAr/cm2 was found to be optimum. Within the range of ion current density investigated, the gettering efficiency increased with the ion current density. Implantation performed at a high temperature provided less gettering than that performed at a lower temperature. A postannealing temperature of either 900° or 1000°C could be superior to 1100°C in gettering gold, provided enough gettering time was allowed. The optimum conditions for ion‐implantation gettering were applied to a typical MOS processing cycle on as‐recieved silicon samples. For an ion dose of 1×1016 normalAr/cm2 , a total gettering time of 8 hr at 1000°C increased the MOS generation lifetime significantly compared with that for a control sample. The data from the MOS generation lifetime study are consistent with the results of the neutron activation analysis.

An introduction to gold gettering in silicon

“…The damage is produced using a variety of techniques such as a laser, abrasion, phosphorus diffusion, etc. During subsequent thermal anneals, the damaged areas on the backside act as sinks which are thought to cause the migration of metals from the bulk and surface of the wafer to the backside (15)(16)(17)(18)(19)(20)(21)(22)(23)(24)(25)(26)(27)(28)(29)(30).…”

Germanium Back‐Side Gettering of Gold in Silicon

“…The damage is produced using a variety of techniques, such as a laser, abrasion, phosphorous diffusion, etc. During subsequent thermal anneals, the damaged areas on the back side act as sinks that are thought to cause the segregation of metals from the bulk and surface of the wafer to the back side (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16).…”