1987
DOI: 10.1007/bf03214657
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An introduction to gold gettering in silicon

Abstract: Metals, and particularly gold, introduce electrical states into silicon which act as traps for charge carriers. While this is desirable in some devices, in others it degrades performance and must be removed by gettering. This paper discusses the problem, and presents experimental studies on the mechanism of intrinsic gettering of gold.

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Cited by 2 publications
(4 citation statements)
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References 27 publications
(27 reference statements)
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“…This unexpected occurrence of the high Au peak is the first ever reported direct evidence of metal migrating from the electrode to inside the perovskite layer. This phenomenon, however, has been observed previously in inorganic semiconductors for several different metals such as Au, Ag, Ni, Cu, and Fe. Figure b presents the 3D distribution of the ions shown in Figure a across a 100 μm 2 region of the samples (see Movie S1 for an animated 3D reconstruction). One can clearly see that the respective ions are distributed uniformly in the xy plane of the device.…”
Section: Results and Discussionsupporting
confidence: 55%
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“…This unexpected occurrence of the high Au peak is the first ever reported direct evidence of metal migrating from the electrode to inside the perovskite layer. This phenomenon, however, has been observed previously in inorganic semiconductors for several different metals such as Au, Ag, Ni, Cu, and Fe. Figure b presents the 3D distribution of the ions shown in Figure a across a 100 μm 2 region of the samples (see Movie S1 for an animated 3D reconstruction). One can clearly see that the respective ions are distributed uniformly in the xy plane of the device.…”
Section: Results and Discussionsupporting
confidence: 55%
“…Indeed, we observe a severe, irreversible reduction in V oc , J sc , and FF in the devices aged at high temperature. The phenomenon of Au creating mid-band-gap states for silicon devices has been reported before. , …”
Section: Results and Discussionmentioning
confidence: 55%
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