We report here for the first time a 0.18ym fully-depleted SO1 process with PVD TiN metal gate. Because midgap work function metal gate and very light channel doping were used, threshold voltage can he easily controlled in +300mV to +5OOmV range and on-wafer Vt variation was only about Results and Discussions +5mV. Short channel effects can be further improved when a) Vt and Subthreshold Slope silicon film thickness is thinner than 300A. Subthreshold Vts can be easily controlled in the +300mV to +500mV slope was kept helow 75mV/dec even for subnominal devices range by using midgap work function metal gate and very and Vt roll-offs for both N-and P-MOSFETs were very small. light channel doping. PMOSFETs Vt roll-off is still quite serious when Tsi (thickness of silicon) is at 500A range Introduction (Fig.2), hut this can he much improved by thinning Tsi to FD (Fully-Depleted) SO1 is very attractive for deep sub-about 270A (Fig.3). Subthreshold slope under 75mV/dec can quarter micron CMOS applications hecause of its quasi-ideal he achieved in this manner (Fig.4). properties, easier isolation and simpler front-end process [I].
The maturation of low cost Silicon-on-Insulator (SOI) MOSFET technology in the microwave domain has brought about a need to develop speci®c characterization techniques. An original scheme is presented, which, by combining careful design of probing and calibration structures, rigorous in-situ calibration, and a new powerful direct extraction method, allows reliable identi®cation of the parameters of the non-quasi-static small-signal model and the high-frequency noise parameters for MOSFETs. The extracted model is shown to be valid up to 40 GHz.
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