A 100 nm copper/low-k bulk CMOS technology with multi Vt and multi gate oxide integrated transistors for low standby power, high performance and RF/analog system on chip applications

Yeap, Gary; Chen, J.; Grudowski, P. A.; Jeon, Young‐Jin; Shiho, Y.; Qi, Wenjie; Jallepalli, S.; Ramani, N.; Hellig, K.; Vishnubhotla, L.; Luo, Tzy-Jiun M.; Tseng, Hsing‐Huang; Du, Yi; Lim, Sung Kyoo; Abramowitz, P.; Reddy, C. R. R. M.; Parihar, Shivendra Singh; Singh, R. Baliram; Wright, Mike; Patterson, Kyle; Benavides, N.D.; Bonser, D.; Gompel, T. Van; Conner, J.; Lee, J.J.; Rendon, M.J.; Hall, David; Nghiem, Anh; Stout, R.; Weidemann, K.; Duvallet, A.; Alvis, J.; Dyer, D.; Burnett, D.; Ingersoll, P.; Wimmer, Karl; Veeraraghavan, S.; Foisy, M.; Hall, Marie A.; Pellerin, John; Wristers, D.; Woo, M.; Lage, C.

doi:10.1109/vlsit.2002.1015370

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Cited by 13 publications

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“…Monolithic integration of transceiver circuits on a single chip has been a long-awaited dream of RF designers. Recently, the performance improvement in advanced CMOS technology has paved the way for RF components integration with analog and digital on a single chip[46][47][48]. These scaled-down CMOS devices exhibit high cut-off frequencies, high performance integrated passives and operate at lower voltages.…”

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confidence: 99%