Optimization of short channel effect and external resistance on small size FinFET for different threshold voltage flavors and supply voltages

Han, Chengying; Shi, Xuejie; Huang, Qiyu

doi:10.1016/j.mejo.2019.01.008

Cited by 2 publications

(1 citation statement)

References 25 publications

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“…In this study, V T extraction was followed the constant current methodology. To accelerate the process and circuit development in yield and reliability analysis in the nano-node era, the technology computer-aided design simulator is an appropriate choice as an assistant [23][24][25].…”

Section: Purpose Stress Methods Specificationsmentioning

confidence: 99%

Hot Carrier Stress Sensing Bulk Current for 28 nm Stacked High-k nMOSFETs

et al. 2020

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This work primarily focuses on the degradation degree of bulk current (IB) for 28 nm stacked high-k (HK) n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs), sensed and stressed with the channel-hot-carrier test and the drain-avalanche-hot-carrier test, and uses a lifetime model to extract the lifetime of the tested devices. The results show that when IB reaches its maximum, the ratio of VGS/VDS values at this point, in the meanwhile, gradually increases in the tested devices from the long-channel to the short ones, not just located at one-third to one half. The possible ratiocination is due to the ON-current (IDS), in which the short-channel devices provide larger IDS impacting the drain junction and generating more hole carriers at the surface channel near the drain site. In addition, the decrease in IB after hot-carrier stress is not only the increment in threshold voltage VT inducing the decrease in IDS, but also the increment in the recombination rate due to the mechanism of diffusion current. Ultimately, the device lifetime uses Berkley’s model to extract the slope parameter m of the lifetime model. Previous studies have reported m-values ranging from 2.9 to 3.3, but in this case, approximately 1.1. This possibly means that the critical energy of the generated interface state becomes smaller, as is the barrier height of the HK dielectric to the conventional silicon dioxide as the gate oxide.

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Section: Purpose Stress Methods Specificationsmentioning

confidence: 99%

Hot Carrier Stress Sensing Bulk Current for 28 nm Stacked High-k nMOSFETs

et al. 2020

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Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)

Wan

Liu

et al. 2022

Applied Sciences

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This study illustrates a type of novel device. Integrating fin field-effect transistors (FinFETs) with current silicon-on-insulator (SOI) wafers provides an excellent platform to fabricate advanced specific devices. An SOI FinFET device consists of three independent gates. By connecting the various gates, multiple working modes are obtained. Compared with traditional FinFETs, the multi-enhanced operation gate fin field-effect transistor in this study combines independent gates by connecting the selection modes; thus, a possible operation can be performed to attain a FinFET with five equivalent working states in only one device. This novel function can enable the device to work with multiple specific voltages and currents by connecting the corresponding gate combinations, augmenting the integrated degrees and shifting the working modes, thereby meeting the different needs of high-speed, low-power, and other potential applications. Further, the potential applications are highlighted.

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Optimization of short channel effect and external resistance on small size FinFET for different threshold voltage flavors and supply voltages

Cited by 2 publications

References 25 publications

Hot Carrier Stress Sensing Bulk Current for 28 nm Stacked High-k nMOSFETs

Hot Carrier Stress Sensing Bulk Current for 28 nm Stacked High-k nMOSFETs

Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)

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