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We present heavy ion and proton upset measurements, including total dose, and d t s p b e n t damage on a one micron, GaAs, complementary-hetemstructure insulated-gate FET (C-HIGFET) lk x 1 SRAM. SEU characteristics show a two order of magnitude improvement over GaAs MESFET technology. Heavy-ion upset qudiirium m m m e n t s show that all cells upset with equal probabiity at the five percent LET threshold. This indicates that for this device the shape of the cross section versus LET curve is a result of a probability distribution that applies to all cells and is not the result of variations in cell sensitivities. The data set also indicates that the traditional twodimensional a@) normalization to LET and fluence are not applicable to this technology.

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h3STRACTThe present best method of predicting proton induced SEU rates in the proton radiation belts is given by W.L. Bendel [1,2, and 31. It is a semi-empirical technique and describes the upset cross section as a function of a single experimental parameter. Bendel presented a two parameter approach in [3] but decided to emphasize the simpler one parameter approach since it could adequately describe the available data. Shimano et al. [4] presented results showing slight improvements in the fits using the two parameter Bendel model, and a slightly different two parameter model has been used by Normand [5]. Recent energy dependent experiments at this and other laboratories [6] on small feature size devices have produced data that is clearly not adequately fit by the single parameter approach. This paper demonstrates that improved fits of both new and old data can be obtained with a two parameter approach. Shimano's work focussed on four devices, three of which are from older technologies with large feature sizes (> 1.5 pm) and are no longer representative of the newer small feature sized (< 1.5 pm) devices. This work provides summary analyses with the improved Bendel model on much of the existing published proton data [S-131, and also on recent data [6,14, and 151 on newer devices.

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