ESCA is used to characterize silicon nitride surface oxidation. Si 2p, N 1s, and O 1s binding energies and photoelectron line intensities of oxidized nitride films are compared with the corresponding lines from thick reference films of silicon, silicon nitride, silcon dioxide, and a series of oxynitrides. Rapid initial oxidation of silicon nitride surfaces occurs at room temperature on exposure of nitride films to air. A graded oxidized nitride film forms between the film surface and the nitride. Similarly, oxynitride films with gradations in composition are obtained upon oxidation of nitride films at high temperatures.

Amorphous aluminum oxide films were deposited at 420~ by thermal decomposition of an aluminum alkoxide. The reducing or oxidizing atmosphere used during deposition affects the chemical and electrical properties of the oxide films. These films have shown superior characteristics when compared to SiO2 films deposited by a similar process under the same conditions. The dielectric properties of these A1208 films compare favorably with anodized A1203 films 9 The resistance of these films to moisture makes them attractive as coatings for passivation of electron devices. The electrical properties of silicon and germanium surfaces covered with these A1208 films vary according to the deposition atmosphere.

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