Deposition and Properties of Aluminum Oxide Obtained by Pyrolytic Decomposition of an Aluminum Alkoxide

Abstract

Amorphous aluminum oxide films were deposited at 420~ by thermal decomposition of an aluminum alkoxide. The reducing or oxidizing atmosphere used during deposition affects the chemical and electrical properties of the oxide films. These films have shown superior characteristics when compared to SiO2 films deposited by a similar process under the same conditions. The dielectric properties of these A1208 films compare favorably with anodized A1203 films 9 The resistance of these films to moisture makes them attractive as coatings for passivation of electron devices. The electrical properties of silicon and germanium surfaces covered with these A1208 films vary according to the deposition atmosphere.

Properties of alumina films prepared by metal-organic chemical vapour deposition at atmospheric pressure in the presence of small amounts of water

“…[2], Dhanavantri et al [3], Morssinkhof [6] and Aboaf [7] studied the deposition of thin alumina films from aluminium-tri-isopropoxide (ATI). Other precursors used were 2-ethylhexanoate (Maruyama and Nakai [8]), aluminium-acetylacetonate (Maruyama and Arai [9], Boldyrev et al [ 10], Korzo [ 11 ]), and hexafluoroacetylacetonate (Temple and Reisman [12]).…”

The protective properties of thin alumina films deposited by metal organic chemical vapour deposition against high-temperature corrosion of stainless steels

“…Changing the deposition time results in a linear relationship of the coating thickness with time and in a growth rate of 2.4/~m h i. Aboaf [7] also found a linear relationship, but the growth rate was substantially lower.…”

“…In the first process AICI 3 and water or CO2-H2 are used to form A12 03 at 1000-1200 °C and at a pressure of 0.5-5 Torr [5,6]. The second process has been described by Aboaf [7]. He used aluminium triisopropoxide (ATI), to form a dense AI20 3 film at 420 °C at atmospheric pressure.…”

Al2O3 coatings against high temperature corrosion deposited by metal-organic low pressure chemical vapour deposition

“…Metal-organic chemical vapour deposition (MOCVD) of thin amorphous films of AI203 for use in electronic devices has been reported by several authors [1][2][3]. In recent years A1203 has also been investigated for application as a protective coating against high temperature corrosion in coal gasification environments.…”

“…In recent years A1203 has also been investigated for application as a protective coating against high temperature corrosion in coal gasification environments. The A1203 coatings were produced by MOCVD using the metal alkoxides alurninium tri-isopropoxide (AI(OC3H7)3) [4] and aluminium tri-sec-butoxide (ATSB) (Al(OC4Hg)3) [3,5,6] as precursors. The application of metal aikoxides as precursors has several advantages: (1) these compounds can be purified to a high degree; (2) they contain enough oxygen for the formation of the desired oxide, which means that no additional compounds have to be added to the gas stream--this is an advantage over the use of trimethyl aluminium (TMA) with oxygen or nitrous oxide [7]; (3) the deposition temperature is much lower than for the formation of AI203 from AICI3, CO2 and H 2 [8,9].…”