1973
DOI: 10.1149/1.2403539
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Chemical Composition and Electrical Properties of Tin Oxide Films Prepared by Vapor Deposition

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Cited by 101 publications
(47 citation statements)
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“…Nevertheless, when doped with Ar, B, Bi, F, P, or Sb, its conductivity increases considerably [1][2][3][4][5][6]. There have also been attempts to use less common elements as doping agents, like Ir, Rh, and various lanthanides [7][8][9][10][11][12].…”
Section: Introductionmentioning
confidence: 99%
“…Nevertheless, when doped with Ar, B, Bi, F, P, or Sb, its conductivity increases considerably [1][2][3][4][5][6]. There have also been attempts to use less common elements as doping agents, like Ir, Rh, and various lanthanides [7][8][9][10][11][12].…”
Section: Introductionmentioning
confidence: 99%
“…This kind of oxide exhibits very high resistivity at room temperature and thus cannot be used as an electrode material directly. However, its conductivity can be improved significantly by doping Ar, B, Bi, F, P or Sb [9,[22][23][24][25][26][27]. Doped SnO 2 films are usually used as transparent electrodes in high-efficiency solar cells, gas detectors, far IR detectors and transparent heating elements [28].…”
Section: Introductionmentioning
confidence: 99%
“…The composition of the sample was calculated as O 2 -65.54 %, Sn-29.38 % and Cl-5.08 %. The variation of the atomic percentage of Sn and O 2 and presence of Cl contaminate as residue gave the film a nonstoichiometric nature due to which the film showed a higher conductivity without introducing any doping [4,13]. …”
Section: Structural Propertiesmentioning
confidence: 99%