Surface Oxidation of Silicon Nitride Films

Abstract

ESCA is used to characterize silicon nitride surface oxidation. Si 2p, N 1s, and O 1s binding energies and photoelectron line intensities of oxidized nitride films are compared with the corresponding lines from thick reference films of silicon, silicon nitride, silcon dioxide, and a series of oxynitrides. Rapid initial oxidation of silicon nitride surfaces occurs at room temperature on exposure of nitride films to air. A graded oxidized nitride film forms between the film surface and the nitride. Similarly, oxynitride films with gradations in composition are obtained upon oxidation of nitride films at high temperatures.

Aqueous Lubrication of SiC and Si3N4 Ceramics Aided by a Brush-like Copolymer Additive, Poly(l-lysine)-graft-poly(ethylene glycol)

“…The O1s signal consisted of a major contribution at 532.1 eV, corresponding to an O-Si bond, measured at 532.3 eV by Bertoti. An additional minor contribution at 530.9 eV, too low to be an SiO x N y species [41], which can be attributed to hydroxide or carbonate bonded to a NH 3 species, corresponds to the value of 530.8 eV measured by Bertoti. A final contribution to the O1s spectrum at 533.1 eV can be ascribed to adsorbed water or ethanol remaining from the cleaning process or possibly the Na Auger contribution, which was present in the full spectra as a minor contaminant.…”

Investigation of proximity effects in electron microscopy and lithography

“…The SiN membrane had a thickness of 200 nm (referred to as SiN-200 nm) and the bulk substrate was a Si crystal covered with a 50 nm thick silicon nitride layer (referred to as SiNbulk). Since both were stored under ambient conditions for a prolonged time, they are covered by a native silicon oxide film, with a thickness in the order of 1 nm, 22 i.e., both have the same surface properties.…”

Through a Window, Brightly: A Review of Selected Nanofabricated Thin-Film Platforms for Spectroscopy, Imaging, and Detection

“…111 The surface can be generally conditioned using standard approaches such as exposure to a suitable oxidizing or reducing environment, or wet etching including hydrofluoric acid (and analogues) or piranha solution (and analogues). 20,47,64,102,106,108,[114][115][116][117][118][119][120][121][122][123] Specialized extensions of these methods can bring additional chemical flexibility. 20,64,104 Silane chemistry is a common route to surface chemical functionalization, but one that can be undermined by insufficient attention to either the SiN x process history or to the demands of the silane reaction itself.…”