Finding an optimized absorber stack is becoming a more critical issue in the fabrication of extreme ultraviolet ͑EUV͒ mask since it is directly related to the performance of lithography such as pattern fidelity and productivity. Optical simulation, deposition, and measurement have been conducted to establish an optimized absorber stack including antireflection coating ͑ARC͒, absorber layer, and capping ͑or buffer͒ layer, which satisfies major requirements for EUV mask applications. TaN and the other absorber candidates do not show acceptable reflectivity value ͑lower than 5%͒ in deep ultraviolet ͑DUV͒ wavelength region ͑199 or 257 nm͒ for pattern inspection. DUV reflectivity can be lowered by applying C and Al 2 O 3 layers as top ARCs for 199 and 257 nm wavelengths, respectively, while keeping the EUV reflectivity at 13.5 nm less than 1%. ARC-covered TaN absorber stacks result in a reduction of printed CD variation owing to the mitigation of the shadow effect. However, long-term stability and fabricability of these stacks should be examined further.
Using the ab initio pseudopotential calculations, the surface diffusion and incorporation process at the interface of Fe-Al multilayer system were quantitatively investigated. The hollow site was most stable adsorption site on both Al (001) and Fe (001) surface. The adsorption energies were 8.62 eV for Fe/Al (001) and 5.30 eV for Al/Fe (001) system. The calculated energy barriers for the surface diffusion of adatom were 0.89 eV and 0.61 eV for each system. The energy barrier for the incorporation of Fe adatom into the Al substrate was calculated to be 0.38 eV and the energy gain of the system was 0.49 eV. However, the Al adatom required relatively large energy barrier, 0.99 eV for the incorporation into the Fe substrate resulting in 0.13 eV increase in total energy of the system.
The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing. Recently both blank suppliers achieved 1-digit number of defects at 60nm in size using their M1350s. In this paper, a full field EUV mask with Teron 61X blank inspection is fabricated to see the printability of various defects on the blank using NXE 3100. Minimum printable blank defect size is 23nm in SEVD using real blank defect. Current defect level on blank with Teron 61X Phasur has been up to 70 in 132 X 132mm 2 . More defect reduction as well as advanced blank inspection tools to capture all printable defects should be prepared for HVM. 3.6X reduction of blank defects per year is required to achieve the requirement of HVM in the application of memory device with EUVL. Furthermore, blank defect mitigation and compensational repair techniques during mask process needs to be developed to achieve printable defect free on the wafer.
The pattern printability of the Ru/Mo/Si system was quantitatively investigated by two successive schemes, reflectivity of the mask, and aerial image intensity transferred through the system. The reflectivity of a Ru/Mo/Si reflector was calculated and compared with the value of Mo/Si reflector for various incident angles (0°–5°) using Fresnel equation. In order to verify angular dependency of aerial image intensity in a Ru/Mo/Si reflector, we employed SOLID-EUV, which is capable of rigorous electromagnetic field computation. In the calculation, 100 nm line and space pattern was generated by 2D mask geometry with perfect absorber of opaque material. Through the investigation of the angular dependency on the pattern printability of Ru/Mo/Si and Mo/Si reflectors, we could suggest the optimal reflector system for specific condition of incident angle, i.e., Ru/Mo/Si system for ≲3° and Mo/Si system for ≳4° for maximizing optical performance of the EUVL system.
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